Presentation Information
[N-6-07]Demonstrating the Superiority of Atomic Layer Etching in 150-nm Gate AlGaN/GaN MOSHEMTs for Ka-Band RF Applications
〇Hsuan-Yao Huang1, Cheng-Xian Liu1, Yu Chen1, Kuan-Pang Chang1, Tsung-Ying Yang1, You-Chen Weng2, Jui-Sheng Wu2, Cheng-Jun Huang1, Fitriyadi Fitriyadi1, You-Ting Lin1, Chung-Han Chiu1, Edward Yi Chang1,2 (1. International College of Semiconductor Technology, National Yang Ming Chiao Tung University (Taiwan), 2. Industry Academia Innovation School, National Yang Ming Chiao Tung University (Taiwan))