[N-6] Group-IV, III-V based Thin-film Growth, and Device Application

12:00 PM - 12:15 PM JST(3:00 AM - 3:15 AM UTC)

[N-6-07] Demonstrating the Superiority of Atomic Layer Etching in 150-nm Gate AlGaN/GaN MOSHEMTs for Ka-Band RF Applications

〇Hsuan-Yao Huang¹, Cheng-Xian Liu¹, Yu Chen¹, Kuan-Pang Chang¹, Tsung-Ying Yang¹, You-Chen Weng², Jui-Sheng Wu², Cheng-Jun Huang¹, Fitriyadi Fitriyadi¹, You-Ting Lin¹, Chung-Han Chiu¹, Edward Yi Chang^1,2 (1. International College of Semiconductor Technology, National Yang Ming Chiao Tung University (Taiwan), 2. Industry Academia Innovation School, National Yang Ming Chiao Tung University (Taiwan))

DOI:

https://doi.org/10.7567/SSDM.2025.N-6-07

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