Presentation Information

[SO-PS-01-08]Dual-Mode Charge Trap Flash Memory Using Nickel-Silicide Schottky-Junction Reconfigurable FETs via Channel Modulation Engineering

〇Ki-Ju Park1, Seong-Hwan Lim1, Jin-Wook Shin2, Jong-Heon Yang2, Won-Ju Cho1 (1. The Univ. of Kwangwoon (Korea), 2. The Lab. of ETRI (Korea))