[SO-PS-04] 04: Power / High‐speed Devices and Materials

1:34 PM - 1:36 PM JST(4:34 AM - 4:36 AM UTC)

[SO-PS-04-03] 1.2 kV Hybrid Power Switch Consisting of a PSJ GaN HEMT, a Si IGBT and a SiC Diode

〇Alireza Sheikhan¹, Ekkanath Madathil Sankara Narayanan¹, Hiroji Kawai², Shuichi Yagi², Hironobu Narui² (1. The University of Sheffield (UK), 2. Powdec K.K. (Japan))