[SO-PS-04] 04: Power / High‐speed Devices and Materials | 2025 International Conference on Solid State Devices and Materials

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Short Oral Presentation04: Power / High‐speed Devices and Materials

[SO-PS-04]04: Power / High‐speed Devices and Materials

Wed. Sep 17, 2025 1:30 PM - 2:20 PM JST
Wed. Sep 17, 2025 4:30 AM - 5:20 AM UTC

Room M (414+415, 4th Floor)

Session Chair: Taketomo Sato (Hokkaido Univ.), Joel T. Asubar (Univ. of Fukui)

1:30 PM - 1:32 PM JST(4:30 AM - 4:32 AM UTC)

[SO-PS-04-01]Structures and Stability of Ga₂O₃ on α-Al₂O₃(0001) Substrate: A First-Principles Study

〇Koki Ishida¹, Toru Akiyama¹, Takahiro Kawamura¹ (1. Mie university (Japan))

1:32 PM - 1:34 PM JST(4:32 AM - 4:34 AM UTC)

[SO-PS-04-02 (Late News)]Integration of Solution-Processed BaTiO₃ Dielectric for Enhancing the High-Voltage Performance of β-Ga₂O₃ Power Devices

〇Zhiqiang LI¹, Wenpeng Zhou¹, Jiye Yang¹, Zuokai Wen¹, Shan Huang¹, Hanqin Zhou¹, Man Hoi Wong¹ (1. The Hong Kong University of Science and Technology (Hong Kong))

1:34 PM - 1:36 PM JST(4:34 AM - 4:36 AM UTC)

[SO-PS-04-03]1.2 kV Hybrid Power Switch Consisting of a PSJ GaN HEMT, a Si IGBT and a SiC Diode

〇Alireza Sheikhan¹, Ekkanath Madathil Sankara Narayanan¹, Hiroji Kawai², Shuichi Yagi², Hironobu Narui² (1. The University of Sheffield (UK), 2. Powdec K.K. (Japan))

1:36 PM - 1:38 PM JST(4:36 AM - 4:38 AM UTC)

[SO-PS-04-04]Degradation Behaviors Comparation and Analysis of Two Typical Trench SiC MOSFETs Under High Gate Voltage Stress

〇peng liao¹, Yanghao Wang¹, Jianbin Guo¹, QingQing Sun¹, David Wei Zhang¹, Hang Xu¹ (1. The Univ. of Fudan (China))

1:38 PM - 1:40 PM JST(4:38 AM - 4:40 AM UTC)

[SO-PS-04-05]TCAD and Experimental Study of Geometric Components in Charge Pumping Current for Accurate Characterization of Interface Trap Density in SiC pMOSFETs

〇Kazuma Shimura¹, Dai Okamoto¹, Yuta Taguchi¹, Kenta Kimata¹, Mitsuru Sometani², Hirohisa Hirai², Mitsuo Okamoto², Tetsuo Hatakeyama¹ (1. Toyama Pref. Univ. (Japan), 2. AIST (Japan))

1:40 PM - 1:42 PM JST(4:40 AM - 4:42 AM UTC)

[SO-PS-04-06]Influence of Dummy Gate Layout on Turn-On EMI Noise in Trench IGBTs

Wei Wei^1,2, 〇Xiaoli Tian¹, Ruixue Mai^1,2, Yun Bai¹, Yidan Tang¹, Jilong Hao¹, Xuan Li¹, Hong Chen³, Xinhua Wang¹, Xinyu Liu¹ (1. Inst.of Microelectronics of Chinese Academy of Sciences (China), 2. Univ. of Chinese Academy of Sciences (China), 3. JIEJIE Microelectronics Co. Ltd (China))

1:42 PM - 1:44 PM JST(4:42 AM - 4:44 AM UTC)

[SO-PS-04-07]Orientation Dependence of Structural Stability and Band Alignment for N-incorporated 4H-SiC/SiO₂Interfaces: A DFT-Based Approach

〇Naoto Ise¹, Toru Akiyama¹, Tetsuo Hatakeyama², Kenji Shiraishi³, Takashi Nakayama⁴ (1. Mie University (Japan), 2. Toyama Prefectural University (Japan), 3. Tohoku University (Japan), 4. Chiba University (Japan))

1:44 PM - 1:46 PM JST(4:44 AM - 4:46 AM UTC)

[SO-PS-04-08]Resistivity Control via Dopant Evaporation in Sb-Doped CZ-Si Crystal Growth

〇Takumi Yatai¹, Wataru Saito¹, Shin-ichi Nishizawa¹ (1. Kyushu Univ (Japan))

1:46 PM - 1:48 PM JST(4:46 AM - 4:48 AM UTC)

[SO-PS-04-09]A Surge-Robust Packaging Reinforcement Method for SiC MPS Diodes Using Ag Bonding Metal Foil

〇Zheng Hu^1,2, Yidan Tang¹, Zhen Dong^1,2, Wenlong Liu^1,2, Lu Cao^1,2, Xinyu Liu¹ (1. Institute of Microelectronics, Chinese Academy of Sciences (China), 2. School of Microelectronics, University of Chinese Academy of Sciences (China))

1:48 PM - 1:50 PM JST(4:48 AM - 4:50 AM UTC)

[SO-PS-04-10]Investigation of the Temperature-Dependent Degradation Behaviors in RF Performance of AlGaN/GaN HEMTs Subjected to On-state DC Stress

〇Chun-Yi Hsia¹, Yi-Fan Tsao¹, Ping-Hsun Chiu¹, Chia-Hui Liu¹, Chen-Hsuan Hung¹, Heng-Tung Hsu¹ (1. National Yang Ming Chiao Tung University (Taiwan))

1:50 PM - 1:52 PM JST(4:50 AM - 4:52 AM UTC)

[SO-PS-04-11]Suppression of Leakage and Hysteresis in p-GaN HEMTs by In-situ NH₃ Plasma

Jiang Wei Siang¹, Phan Thi My Kien¹, Chu Chen Ling², Noriyuki Watanabe³, Toshifumi Konishi³, 〇Tsai Chia Lung¹, Ke Wen Cheng², Horng Ray Hua^1,4 (1. Industrial Technology Research Institute (Taiwan), 2. National Taiwan University of Science and Technology (Taiwan), 3. NTT Advanced Technology Corporation (Japan), 4. National Yang Ming Chiao Tung University (Taiwan))

1:52 PM - 1:54 PM JST(4:52 AM - 4:54 AM UTC)

[SO-PS-04-12]Al-rich AlGaN HFET for Extreme Environment Applications

〇Do-Hyeong Yeo¹, MyeongSu Chae¹, Hyun-Seop Kim², Hyungtak Kim¹, Ho-Young Cha¹ (1. Hongik Univ. (Korea), 2. Kunsan National Univ. (Korea))

1:54 PM - 1:56 PM JST(4:54 AM - 4:56 AM UTC)

[SO-PS-04-13]Investigation of the Drain Bias-Dependent Degradation Behaviors in RF Perfor-mance of AlGaN/GaN HEMTs Subjected to High-Temperature DC Stress

〇Chia-Hui Liu¹, Yi-Fan Tsao¹, Chun-Yi Hsia¹, Ping-Hsun Chiu¹, Chen-Hsuan Hung¹, Heng-Tung Hsu¹ (1. National Yang Ming Chiao Tung University (Taiwan))

1:56 PM - 1:58 PM JST(4:56 AM - 4:58 AM UTC)

[SO-PS-04-14]Ultra Low On-Resistance of Novel Quaternary QST Substrate with HfAlO Dielectric Layer HEMT

〇Kuang Ting Hsieh², Yi Hsuan Chang¹, Yan Kuei Wu¹, Wei Chou Hsu^1,2 (1. Inst. of Microelectronics, Department of Electrical Eng., National Cheng Kung Univ. (Taiwan), 2. Academy of Innovative Semiconductor and Sustainable Manufac., National Cheng Kung Univ. (Taiwan))

1:58 PM - 2:00 PM JST(4:58 AM - 5:00 AM UTC)

[SO-PS-04-15]High-Performance Normally-Off InAlGaN/GaN MOSHEMTs with p-NiO_x Gate and Dual Dielectric Structure

〇Yen-Ying Chu¹, Yun-Ru Lin¹, Yen-Kuei Wu¹, Wei-Chou Hsu¹ (1. National Cheng Kung Univ. (Taiwan))

2:00 PM - 2:02 PM JST(5:00 AM - 5:02 AM UTC)

[SO-PS-04-16]Realization of N-polar GaN/AlGaN Heterostructures on Silicon Using an AlSiN Polarity Inversion Layer by MOCVD

〇Yin-Nan Wang¹, Chia-Yu Hsieh¹, Hsin-Ning Li¹, Hung-Yang Lin¹, Jen-Inn Chyi¹, Yue-ming Hsin¹ (1. National Central Univ. (Taiwan))

2:02 PM - 2:04 PM JST(5:02 AM - 5:04 AM UTC)

[SO-PS-04-17]Bias and Temperature Dependence of Threshold Voltage Instability Induced by Low Drain Bias in E-mode AlGaN/GaN HEMTs

〇Myeongsu Chae¹, Hyungtak Kim¹ (1. Hongik Univ. (Korea))

2:04 PM - 2:06 PM JST(5:04 AM - 5:06 AM UTC)

[SO-PS-04-18]Grating-Gate THz Plasmonic Detector Based on an InGaAs-channel HEMT with an InP Barrier Layer

〇Masaki Nagatsu¹, Kenichi Narita¹, Yuma Takida², Hiroaki Minamide², Tsung tse Lin¹, Akira Satou¹ (1. Tohoku Univercity (Japan), 2. RIKEN Center for Advanced Photonics (Japan))

2:06 PM - 2:08 PM JST(5:06 AM - 5:08 AM UTC)

[SO-PS-04-19]Optimizing RF Performance of InGaAs MOSFETs via Indium Composition Engineering

Cheng-Jun Huang¹, Jin-Yu Chang¹, Yi-Ting Feng¹, Jing-Yuan Wu¹, Hua-Lun Ko¹, Si-Meng Chen^1,2, 〇Hsuan-Yao Huang¹, Jui-Sheng Wu¹, Shuo Hwai³, Edward. Yi Chang¹ (1. Nat’l Yang Ming Chiao Tung Univ. (Taiwan), 2. Tokyo Inst. of Tech. (Japan), 3. Univ. of California, Los Angeles (United States of America))

2:08 PM - 2:10 PM JST(5:08 AM - 5:10 AM UTC)

[SO-PS-04-20]Impact of Gate Recess Descum on the DC and RF Characteristics of AlInAs/GaInAs High-Electron Mobility Transistors

〇Fran Kostelac¹, Giorgio Bonomo¹, Tamara Saranovac¹, Diego Marti¹, Ralf Flückiger¹, Olivier J.S. Ostinelli¹, Colombo R. Bolognesi¹ (1. ETH Zürich (Switzerland))

2:10 PM - 2:12 PM JST(5:10 AM - 5:12 AM UTC)

[SO-PS-04-21]Growth and Characterization of InGaAs Channel HEMTs on GaAs (100) with Pre-Grown InP Metamorphic Buffer Layers

〇Hyunchul Jang¹, Jae-Phil Shim¹, Geunuk Han¹, Yunji Jeong¹, Inseon Song¹, Il-Hyeong Lee¹, Deoksoo Park¹, Eun-kyung Chu¹, Seung Heon Shin², Keun-Man Song¹ (1. KANC (Korea), 2. Soonchunhyang Univ. (Korea))

2:12 PM - 2:14 PM JST(5:12 AM - 5:14 AM UTC)

[SO-PS-04-22]Isolation Characteristics of GaN Mesas on Diamond Substrates Fabricated Using the Surface-Activated Bonding

〇Yosei Sunamoto¹, Hazuki Tomiyama¹, Tetsuya Suemitsu², Naoteru Shigekawa¹, Jianbo Liang¹ (1. Osaka Metropolitan University (Japan), 2. Tohoku University (Japan))

2:14 PM - 2:16 PM JST(5:14 AM - 5:16 AM UTC)

[SO-PS-04-23]Thermally Robust 3C-SiC/Diamond and Si (111)/Diamond Templates for Advanced III-Nitride Process

〇Hikaru Iwamoto¹, Naoteru Shigekawa¹, Jianbo Liang¹ (1. Osaka Metropolitan University (Japan))

2:16 PM - 2:18 PM JST(5:16 AM - 5:18 AM UTC)

[SO-PS-04-24]Enhancement-Mode InAlGaN/GaN HEMTs Featuring USPD-Deposited Li-Doped p-NiOx Gates with Low Interface Trap Density

〇Yu-Hsuan Chen¹, Yan-Kuei Wu¹, Wei-Chou Hsu¹ (1. Inst. of Microelectronics, Department of Electrical Engineering, National Cheng Kung Univ. (Taiwan))

2:18 PM - 2:20 PM JST(5:18 AM - 5:20 AM UTC)

[SO-PS-04-25 (Late News)]Improved Device Characteristics of P-GaN/AlGaN/GaN HFET
with Boron Nitride Film

〇Jun Hyeok Yim¹, Myeong Su Chae¹, Jin Hyeok Pyo¹, Sangyeon Pak¹, Hyungtak Kim¹, Ho-Young Cha¹ (1. Hong-Ik Univ. (Korea))

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