[SO-PS-04] 04: Power / High‐speed Devices and Materials

1:38 PM - 1:40 PM JST(4:38 AM - 4:40 AM UTC)

[SO-PS-04-05] TCAD and Experimental Study of Geometric Components in Charge Pumping Current for Accurate Characterization of Interface Trap Density in SiC pMOSFETs

〇Kazuma Shimura¹, Dai Okamoto¹, Yuta Taguchi¹, Kenta Kimata¹, Mitsuru Sometani², Hirohisa Hirai², Mitsuo Okamoto², Tetsuo Hatakeyama¹ (1. Toyama Pref. Univ. (Japan), 2. AIST (Japan))