[SO-PS-04] 04: Power / High‐speed Devices and Materials

1:50 PM - 1:52 PM JST(4:50 AM - 4:52 AM UTC)

[SO-PS-04-11] Suppression of Leakage and Hysteresis in p-GaN HEMTs by In-situ NH₃ Plasma

Jiang Wei Siang¹, Phan Thi My Kien¹, Chu Chen Ling², Noriyuki Watanabe³, Toshifumi Konishi³, 〇Tsai Chia Lung¹, Ke Wen Cheng², Horng Ray Hua^1,4 (1. Industrial Technology Research Institute (Taiwan), 2. National Taiwan University of Science and Technology (Taiwan), 3. NTT Advanced Technology Corporation (Japan), 4. National Yang Ming Chiao Tung University (Taiwan))