Presentation Information

[SO-PS-04-15]High-Performance Normally-Off InAlGaN/GaN MOSHEMTs with p-NiOx Gate and Dual Dielectric Structure

〇Yen-Ying Chu1, Yun-Ru Lin1, Yen-Kuei Wu1, Wei-Chou Hsu1 (1. National Cheng Kung Univ. (Taiwan))