[SO-PS-04] 04: Power / High‐speed Devices and Materials

2:08 PM - 2:10 PM JST(5:08 AM - 5:10 AM UTC)

[SO-PS-04-20] Impact of Gate Recess Descum on the DC and RF Characteristics of AlInAs/GaInAs High-Electron Mobility Transistors

〇Fran Kostelac¹, Giorgio Bonomo¹, Tamara Saranovac¹, Diego Marti¹, Ralf Flückiger¹, Olivier J.S. Ostinelli¹, Colombo R. Bolognesi¹ (1. ETH Zürich (Switzerland))