[SO-PS-04] 04: Power / High‐speed Devices and Materials

2:16 PM - 2:18 PM JST(5:16 AM - 5:18 AM UTC)

[SO-PS-04-24] Enhancement-Mode InAlGaN/GaN HEMTs Featuring USPD-Deposited Li-Doped p-NiOx Gates with Low Interface Trap Density

〇Yu-Hsuan Chen¹, Yan-Kuei Wu¹, Wei-Chou Hsu¹ (1. Inst. of Microelectronics, Department of Electrical Engineering, National Cheng Kung Univ. (Taiwan))