Presentation Information
[SO-PS-04-25 (Late News)]Improved Device Characteristics of P-GaN/AlGaN/GaN HFET
with Boron Nitride Film
〇Jun Hyeok Yim1, Myeong Su Chae1, Jin Hyeok Pyo1, Sangyeon Pak1, Hyungtak Kim1, Ho-Young Cha1 (1. Hong-Ik Univ. (Korea))