Presentation Information

[SO-PS-08-06]High-performance Molybdenum Disulfide Transistors with Polycrystalline Gold Electrodes and In-plane Gates

〇Che-Jia Chang1,2, Shih-Jie Chen3, Tzu-Hsuan Chang1, Po-Tsung Lee3, Shih-Yen Lin1,2 (1. National Taiwan University (Taiwan), 2. Academia Sinica (Taiwan), 3. National Yang Ming Chiao Tung University (Taiwan))