[SO-PS-08] 08: Low Dimensional Devices and Materials | 2025 International Conference on Solid State Devices and Materials

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Session Details

Short Oral Presentation08: Low Dimensional Devices and Materials

[SO-PS-08]08: Low Dimensional Devices and Materials

Wed. Sep 17, 2025 1:30 PM - 2:12 PM JST
Wed. Sep 17, 2025 4:30 AM - 5:12 AM UTC

Room K (413, 4th Floor)

Session Chair: Masafumi Jo (RIKEN), Toshifumi Irisawa (AIST)

1:30 PM - 1:32 PM JST(4:30 AM - 4:32 AM UTC)

[SO-PS-08-01]Van der Waals Growth of h-BN on 2D WS₂ by Molecular Beam Epitaxy

〇Ing-Song YU¹, Hao LIU¹, Yen-Ten HO² (1. National Dong Hwa Univ. (Taiwan), 2. Advanced 2D Materials Co. Ltd. (Taiwan))

1:32 PM - 1:34 PM JST(4:32 AM - 4:34 AM UTC)

[SO-PS-08-02]Quantum Transport and Miniband Engineering in One-Dimensional Gated Bilayer Graphene Superlattices

〇Szu-Chao Chen¹, Chi-Hsuan Lee² (1. National Formosa University (Taiwan), 2. Academia Sinica (Taiwan))

1:34 PM - 1:36 PM JST(4:34 AM - 4:36 AM UTC)

[SO-PS-08-03]Interfacial Trap Dynamics and Optoelectronic Modulation in Monolayer MoS₂ Phototransistors

〇Tzu-En Huang¹, Chen Yu Wang¹, Yu Ren Li¹, Neng An Huang¹, Kuang Yao Lo¹ (1. National Cheng Kung Univ. (Taiwan))

1:36 PM - 1:38 PM JST(4:36 AM - 4:38 AM UTC)

[SO-PS-08-04]The study of Inactive Sites on MoS₂: Reversible and Linear Response Gas Sensing in Monolayer MoS₂ with Pre-Gas Concentration Modulation

〇Chen-Yu Wang¹, Tzu-En Huang¹, Yu-Ren Li¹, Neng-An Huang¹, Kuang-Yao Lo¹ (1. National Cheng Kung Univ. (Taiwan))

1:38 PM - 1:40 PM JST(4:38 AM - 4:40 AM UTC)

[SO-PS-08-05]Voltage-Tunable Triggered NO₂ Sensor Based on HfO₂ Memristor and CNT for Low-Power System

〇Ikgeun Kwon¹, Yuseong Jang¹, Hee-Dong Kim¹ (1. Sejong Univ. (Korea))

1:40 PM - 1:42 PM JST(4:40 AM - 4:42 AM UTC)

[SO-PS-08-06]High-performance Molybdenum Disulfide Transistors with Polycrystalline Gold Electrodes and In-plane Gates

〇Che-Jia Chang^1,2, Shih-Jie Chen³, Tzu-Hsuan Chang¹, Po-Tsung Lee³, Shih-Yen Lin^1,2 (1. National Taiwan University (Taiwan), 2. Academia Sinica (Taiwan), 3. National Yang Ming Chiao Tung University (Taiwan))

1:42 PM - 1:44 PM JST(4:42 AM - 4:44 AM UTC)

[SO-PS-08-07]Operation Mechanisms of Graphene/MoS₂ Hetero-structure Photodetectors and Induced Current Variation of Graphene/Al₂O₃/MoS₂ Stacked Structures

〇Yu-Han Huang^1,2, Cheng-Yu Chen^1,2, Chao-Hsin Wu², Shih-Yen Lin¹ (1. Academia Sinica (Taiwan), 2. National Taiwan Univ. (Taiwan))

1:44 PM - 1:46 PM JST(4:44 AM - 4:46 AM UTC)

[SO-PS-08-08]MgO interlayer thickness dependence on magnetic domain formation in CoFe/MgO nanolayer patterns on GaAs (001) substrates

〇Hayato Yonemoto¹, Rui Ochiai¹, Soh Komatsu², Masashi Akabori², Sinjiro Hara^1,3 (1. Hokkaido Univ. (Japan), 2. Japan Adv. Inst. of Sci. and Tech. (Japan), 3. Nat’l Inst. for Materials Sci. (Japan))

1:46 PM - 1:48 PM JST(4:46 AM - 4:48 AM UTC)

[SO-PS-08-09]Crystallinity Improvement for PVD-MoS₂ Films by Plasma Damage Reduction with Higher Deposition Pressure

〇Naoki Matsunaga¹, Jaehyo Jang¹, Soma Ito¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹ (1. Institute of Science Tokyo (Japan))

1:48 PM - 1:50 PM JST(4:48 AM - 4:50 AM UTC)

[SO-PS-08-10]All-2D Pseudo-CFET Inverter with Ultralow Subthreshold Swing N-type Bi₂O₂Se Top-gate Field-Effect Transistor

〇Ching-Min Hsu¹, Hsing-Chien Chien¹, Chi-Chun Cheng², Chun-Yen Hsiao¹, Po-Wen Chiu^1,2 (1. National Tsing Hua Univ. College of Semiconductor Res. (Taiwan), 2. National Tsing Hua Univ. Department of Electrical Engineering (Taiwan))

1:50 PM - 1:52 PM JST(4:50 AM - 4:52 AM UTC)

[SO-PS-08-11]Electron-Beam Surface Engineering For Enhanced Charge Transport All-2D WSe₂ CMOS

〇Chun Yen Hsiao¹, Chi Chun Cheng², Wen Yuan Fei¹, Ching Min Hsu¹, Po Wen Chiu² (1. College of Semiconductor Research, National Tsing Hua Univ. (Taiwan), 2. Department of Electrical Engineering, National Tsing Hua Univ. (Taiwan))

1:52 PM - 1:54 PM JST(4:52 AM - 4:54 AM UTC)

[SO-PS-08-12]N-type Charge Transfer Doping in PVD-MoS₂ Film with ALD-HfO₂ Film

〇Shunsuke Nozawa¹, Jaehyo Jang¹, Naoki Matsunaga¹, Taiga Fuse¹, Takuya Hoshii¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹ (1. Inst. of Sci. Tokyo (Japan))

1:54 PM - 1:56 PM JST(4:54 AM - 4:56 AM UTC)

[SO-PS-08-13]Epitaxial Growth of Single-Crystal Metal on Transition Metal Dichalcogenides Surface

〇Po-Sen Mao^1,2, Yi-Jung Hsu¹, Wen-Hao Chang^1,2,3 (1. National Yang Ming Chiao Tung Univ. (Taiwan), 2. Res. Center for Critical Issues, Academia Sinica (Taiwan), 3. Res. Center for Applied Sciences, Academia Sinica (Taiwan))

1:56 PM - 1:58 PM JST(4:56 AM - 4:58 AM UTC)

[SO-PS-08-14]Simulation of In-Plane Strong Electronic Coupling in Self-Assembled InAs Quantum Dots

〇Ryoga Kai¹, Naoya Miyashita^1,2, Toshiyuki Kaizu^2,1, Koichi Yamaguchi^1,2 (1. Dep. of Eng. Sci Univ. of Electro-Comm. (Japan), 2. QFCD2 center Univ. of Electro-Comm. (Japan))

1:58 PM - 2:00 PM JST(4:58 AM - 5:00 AM UTC)

[SO-PS-08-15]Atomic layer deposition on WSe₂ via F6-TCNNQ monolayer and evaluation of dual gate FET

〇Kensho Matsuda¹, Yuto Noguchi¹, Mengnang Ke², Shohei Kumagai³, Toshihiro Okamoto³, Nobuyuki Aoki¹ (1. Chiba University (Japan), 2. Yokohama National University (Japan), 3. Institute of Science Tokyo (Japan))

2:00 PM - 2:02 PM JST(5:00 AM - 5:02 AM UTC)

[SO-PS-08-16]Fabrication of Room Temperature based Acetone Sensor using Controlled CVD grown MoS2 for Non-invasive Real Time Detection of Diabetes

〇Sohel Siraj¹, Parikshit Sahatiya¹ (1. Birla Institute of Technology and Science Pilani, Hyderabad Campus (India))

2:02 PM - 2:04 PM JST(5:02 AM - 5:04 AM UTC)

[SO-PS-08-17]Direct Measurement of the Specific Contact Resistivity in Monolayer MoS₂ using Cross-Bridge Kelvin Probe Structures

〇Aparna -^1,3, Surajit Sutar¹, Kaustuv Banerjee¹, Cesar Javier Lockhart de la Rosa¹, Gouri Sankar Kar¹, Clement Merckling^1,2, Bart Soree^1,3 (1. IMEC (Belgium), 2. Department of Materials Engineering (MTM), KU Leuven (Belgium), 3. Department of Electrical Engineering (ESAT)-KU Leuven (Belgium))

2:04 PM - 2:06 PM JST(5:04 AM - 5:06 AM UTC)

[SO-PS-08-18]Elastic Effect-Driven MoS₂-Based Surface Acoustic Wave Skin gas sensor

〇Sankar Ganesh Ramaraj¹, Ryo Fujioka¹, Chen Li¹, Daisuke Kiriya ¹, Hiroyasu Yamahara¹, Hitoshi Tabata¹ (1. The University of Tokyo (Japan))

2:06 PM - 2:08 PM JST(5:06 AM - 5:08 AM UTC)

2025 International Conference on Solid State Devices and Materials

Session Details

[SO-PS-08]08: Low Dimensional Devices and Materials

[SO-PS-08-01]Van der Waals Growth of h-BN on 2D WS₂ by Molecular Beam Epitaxy

[SO-PS-08-02]Quantum Transport and Miniband Engineering in One-Dimensional Gated Bilayer Graphene Superlattices

[SO-PS-08-03]Interfacial Trap Dynamics and Optoelectronic Modulation in Monolayer MoS₂ Phototransistors

[SO-PS-08-04]The study of Inactive Sites on MoS₂: Reversible and Linear Response Gas Sensing in Monolayer MoS₂ with Pre-Gas Concentration Modulation

[SO-PS-08-05]Voltage-Tunable Triggered NO₂ Sensor Based on HfO₂ Memristor and CNT for Low-Power System

[SO-PS-08-06]High-performance Molybdenum Disulfide Transistors with Polycrystalline Gold Electrodes and In-plane Gates

[SO-PS-08-07]Operation Mechanisms of Graphene/MoS₂ Hetero-structure Photodetectors and Induced Current Variation of Graphene/Al₂O₃/MoS₂ Stacked Structures

[SO-PS-08-08]MgO interlayer thickness dependence on magnetic domain formation in CoFe/MgO nanolayer patterns on GaAs (001) substrates

[SO-PS-08-09]Crystallinity Improvement for PVD-MoS₂ Films by Plasma Damage Reduction with Higher Deposition Pressure

[SO-PS-08-10]All-2D Pseudo-CFET Inverter with Ultralow Subthreshold Swing N-type Bi₂O₂Se Top-gate Field-Effect Transistor

[SO-PS-08-11]Electron-Beam Surface Engineering For Enhanced Charge Transport All-2D WSe₂ CMOS

[SO-PS-08-12]N-type Charge Transfer Doping in PVD-MoS₂ Film with ALD-HfO₂ Film

[SO-PS-08-13]Epitaxial Growth of Single-Crystal Metal on Transition Metal Dichalcogenides Surface

[SO-PS-08-14]Simulation of In-Plane Strong Electronic Coupling in Self-Assembled InAs Quantum Dots

[SO-PS-08-15]Atomic layer deposition on WSe₂ via F6-TCNNQ monolayer and evaluation of dual gate FET

[SO-PS-08-16]Fabrication of Room Temperature based Acetone Sensor using Controlled CVD grown MoS2 for Non-invasive Real Time Detection of Diabetes

[SO-PS-08-17]Direct Measurement of the Specific Contact Resistivity in Monolayer MoS₂ using Cross-Bridge Kelvin Probe Structures

[SO-PS-08-18]Elastic Effect-Driven MoS₂-Based Surface Acoustic Wave Skin gas sensor

[SO-PS-08-19]Development of a Graphene-CNT Hybrid Gas Sensor and Improvement of Its Sensitivity and Selectivity

[SO-PS-08-20]Influence of Spin-Orbit Coupling in Photoconductivity of Monolayer Transition Metal Dichalcogenides

[SO-PS-08-21]Seeding ALD of High-k Dielectrics on TMD n/p- Dual-Gate FETs with Symmetrical V_TH for CMOS Application

Session Details

[SO-PS-08]08: Low Dimensional Devices and Materials

[SO-PS-08-01]Van der Waals Growth of h-BN on 2D WS2 by Molecular Beam Epitaxy

[SO-PS-08-02]Quantum Transport and Miniband Engineering in One-Dimensional Gated Bilayer Graphene Superlattices

[SO-PS-08-03]Interfacial Trap Dynamics and Optoelectronic Modulation in Monolayer MoS2 Phototransistors

[SO-PS-08-04]The study of Inactive Sites on MoS2: Reversible and Linear Response Gas Sensing in Monolayer MoS2 with Pre-Gas Concentration Modulation

[SO-PS-08-05]Voltage-Tunable Triggered NO2 Sensor Based on HfO2 Memristor and CNT for Low-Power System

[SO-PS-08-06]High-performance Molybdenum Disulfide Transistors with Polycrystalline Gold Electrodes and In-plane Gates

[SO-PS-08-07]Operation Mechanisms of Graphene/MoS2 Hetero-structure Photodetectors and Induced Current Variation of Graphene/Al2O3/MoS2 Stacked Structures

[SO-PS-08-08]MgO interlayer thickness dependence on magnetic domain formation in CoFe/MgO nanolayer patterns on GaAs (001) substrates

[SO-PS-08-09]Crystallinity Improvement for PVD-MoS2 Films by Plasma Damage Reduction with Higher Deposition Pressure

[SO-PS-08-10]All-2D Pseudo-CFET Inverter with Ultralow Subthreshold Swing N-type Bi2O2Se Top-gate Field-Effect Transistor

[SO-PS-08-11]Electron-Beam Surface Engineering For Enhanced Charge Transport All-2D WSe2 CMOS

[SO-PS-08-12]N-type Charge Transfer Doping in PVD-MoS2 Film with ALD-HfO2 Film

[SO-PS-08-13]Epitaxial Growth of Single-Crystal Metal on Transition Metal Dichalcogenides Surface

[SO-PS-08-14]Simulation of In-Plane Strong Electronic Coupling in Self-Assembled InAs Quantum Dots

[SO-PS-08-15]Atomic layer deposition on WSe2 via F6-TCNNQ monolayer and evaluation of dual gate FET

[SO-PS-08-16]Fabrication of Room Temperature based Acetone Sensor using Controlled CVD grown MoS2 for Non-invasive Real Time Detection of Diabetes

[SO-PS-08-17]Direct Measurement of the Specific Contact Resistivity in Monolayer MoS2 using Cross-Bridge Kelvin Probe Structures

[SO-PS-08-18]Elastic Effect-Driven MoS2-Based Surface Acoustic Wave Skin gas sensor

[SO-PS-08-19]Development of a Graphene-CNT Hybrid Gas Sensor and Improvement of Its Sensitivity and Selectivity

[SO-PS-08-20]Influence of Spin-Orbit Coupling in Photoconductivity of Monolayer Transition Metal Dichalcogenides

[SO-PS-08-21]Seeding ALD of High-k Dielectrics on TMD n/p- Dual-Gate FETs with Symmetrical VTH for CMOS Application

[SO-PS-08-01]Van der Waals Growth of h-BN on 2D WS₂ by Molecular Beam Epitaxy

[SO-PS-08-03]Interfacial Trap Dynamics and Optoelectronic Modulation in Monolayer MoS₂ Phototransistors

[SO-PS-08-04]The study of Inactive Sites on MoS₂: Reversible and Linear Response Gas Sensing in Monolayer MoS₂ with Pre-Gas Concentration Modulation

[SO-PS-08-05]Voltage-Tunable Triggered NO₂ Sensor Based on HfO₂ Memristor and CNT for Low-Power System

[SO-PS-08-07]Operation Mechanisms of Graphene/MoS₂ Hetero-structure Photodetectors and Induced Current Variation of Graphene/Al₂O₃/MoS₂ Stacked Structures

[SO-PS-08-09]Crystallinity Improvement for PVD-MoS₂ Films by Plasma Damage Reduction with Higher Deposition Pressure

[SO-PS-08-10]All-2D Pseudo-CFET Inverter with Ultralow Subthreshold Swing N-type Bi₂O₂Se Top-gate Field-Effect Transistor

[SO-PS-08-11]Electron-Beam Surface Engineering For Enhanced Charge Transport All-2D WSe₂ CMOS

[SO-PS-08-12]N-type Charge Transfer Doping in PVD-MoS₂ Film with ALD-HfO₂ Film

[SO-PS-08-15]Atomic layer deposition on WSe₂ via F6-TCNNQ monolayer and evaluation of dual gate FET

[SO-PS-08-17]Direct Measurement of the Specific Contact Resistivity in Monolayer MoS₂ using Cross-Bridge Kelvin Probe Structures

[SO-PS-08-18]Elastic Effect-Driven MoS₂-Based Surface Acoustic Wave Skin gas sensor

[SO-PS-08-21]Seeding ALD of High-k Dielectrics on TMD n/p- Dual-Gate FETs with Symmetrical V_TH for CMOS Application