Presentation Information

[SO-PS-11-02]Passivation of Defects in Sn-Doped Poly-Ge by Post-Annealing

〇Takuto Watanabe1, Ryu Hashimoto1, Takashi Kajiwara1, Kenta Moto1, Keisuke Yamamoto1, Taizoh Sadoh1 (1. Kyushu Univ. (Japan))