[SO-PS-11] 11: Advanced Materials: Synthesis / Crystal Growth / Characterization | 2025 International Conference on Solid State Devices and Materials

2025 International Conference on Solid State Devices and Materials

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Session Details

Short Oral Presentation11: Advanced Materials: Synthesis / Crystal Growth / Characterization

[SO-PS-11]11: Advanced Materials: Synthesis / Crystal Growth / Characterization

Wed. Sep 17, 2025 2:00 PM - 2:28 PM JST
Wed. Sep 17, 2025 5:00 AM - 5:28 AM UTC

Room H (314, 3rd Floor)

Session Chair: Shingo Ogawa (Toray Res. Center, Inc.)

2:00 PM - 2:02 PM JST(5:00 AM - 5:02 AM UTC)

[SO-PS-11-01]Solid-Phase Crystallization of Large-Grain Ultra-Thin Si Films on Insulator by Sn-Doping and Growth-Temperature Lowering

〇Shuma Akiyoshi¹, Yuki Hanafusa¹, Takashi Kajiwara¹, Taizoh Sadoh¹ (1. Kyushu Univ (Japan))

2:02 PM - 2:04 PM JST(5:02 AM - 5:04 AM UTC)

[SO-PS-11-02]Passivation of Defects in Sn-Doped Poly-Ge by Post-Annealing

〇Takuto Watanabe¹, Ryu Hashimoto¹, Takashi Kajiwara¹, Kenta Moto¹, Keisuke Yamamoto¹, Taizoh Sadoh¹ (1. Kyushu Univ. (Japan))

2:04 PM - 2:06 PM JST(5:04 AM - 5:06 AM UTC)

[SO-PS-11-03]Red Emission (620nm) InGaN-Based Nanocolumn LEDs
- Approach for the Improved Current Injection Efficiency –

〇Mahiro Oguchi¹, Rie Togashi¹, Katsumi Kishino¹ (1. Sophia Univ. (Japan))

2:06 PM - 2:08 PM JST(5:06 AM - 5:08 AM UTC)

[SO-PS-11-04]Screen-Printed Cuprous Bromide (CuBr) Thick Films for Ammonia Detection

〇Shoichiro Nakao¹, Tsuyoshi Ueda¹, Hiroshi Miyazaki¹, Takafumi Taniguchi¹, Hiromasa Takashima¹, Hirofumi Inoue², Tomohiro Kawaguchi ² (1. New Cosmos Electric Co., Ltd. (Japan), 2. Figaro Engineering Inc. (Japan))

2:08 PM - 2:10 PM JST(5:08 AM - 5:10 AM UTC)

[SO-PS-11-05]Raman spectroscopy evaluation for solid phase crystallization of amorphous Ge / Mg / SiO2 stacked structure

〇Shota Kikumoto¹, Atsuki Morimoto¹, Taiga Nagashima¹, Kenichiro Takakura¹, Isao Tsunoda¹ (1. National Inst. of Tech., Kumamoto College (Japan))

2:10 PM - 2:12 PM JST(5:10 AM - 5:12 AM UTC)

[SO-PS-11-06]Evaluation of oxygen defect levels of afterglow phosphor Sr₂MgSi₂O₇:E,Dy using first-principles calculations

〇Jumpei Kamikawa¹, Hiroko Kominami¹, Nobuhisa Fujima¹, Kazuhiko Hara¹ (1. Shizuoka Univ. (Japan))

2:12 PM - 2:14 PM JST(5:12 AM - 5:14 AM UTC)

[SO-PS-11-07]Solid Phase Crystallization of On-Insulator Molecular Beam Deposited Germanium Sulfur Thin Films

〇Ahmed Mahmoud^1,2, Ryo Matsumura², Naoki Fukata^1,2 (1. Univ. of Tsukuba (Japan), 2. NIMS-MANA (Japan))

2:14 PM - 2:16 PM JST(5:14 AM - 5:16 AM UTC)

[SO-PS-11-08]van der Waals Epitaxy of Ferroelectric α-GeTe(111) Thin Films
for Spin-Based Frugal Electronics and Neuromorphic Devices

〇Jules Lagrave¹, Nicolas Bernier¹, Jean-Baptiste Dory¹, Yoann Brûlé¹, Pierre Meilleur¹, Oussama J. Mouawad¹, Damien Térébenec¹, Théo Frottier², Maxime Culot², Panagiotis Pappas², Laurent Vila², Jean-Phillipe Attané², Françoise Hippert³, Pierre Noé¹ (1. Inst. CEA-LETI (France), 2. Univ. Grenoble Alpes, CEA, IRIG, SPINTEC (France), 3. Univ. Grenoble Alpes, CNRS, Grenoble INP, LMGP (France))

2:16 PM - 2:18 PM JST(5:16 AM - 5:18 AM UTC)

[SO-PS-11-09]Phase Evolution and Substrate-Dependent Passivation Behavior of ALD-Ru Films under Oxidizing Conditions

〇Youngseo Na¹, Hyunjin Lim¹, Seungchae Lee¹, Yehbeen Im¹, Donguk Kim¹, Kangbaek Seo¹, Changhwan Choi¹ (1. Hanyang Univ. (Korea))

2:18 PM - 2:20 PM JST(5:18 AM - 5:20 AM UTC)

[SO-PS-11-10]C-V characteristics of Mg₂Si graded pn junction fabricated by Ag thermal diffusion on n-type Mg₂Si substrate.

〇Hibiki Katsumata¹, Ryosuke Furuta¹, Kosuke Shimano¹, Shunya Sakane¹, Haruhiko Udono¹ (1. The Univ. of Ibaraki (Japan))

2:20 PM - 2:22 PM JST(5:20 AM - 5:22 AM UTC)

[SO-PS-11-11]Segmentation of Structured Defect Patterns in Wafer Maps Using U-Net Trained on Programmatically Generated Rule-Based Synthetic Data

〇Hironori Banba^1,2, Ichiro Omura² (1. GlobalWafers Japan Co., Ltd. (Japan), 2. Kyushu Institute of Technology (Japan))

2:22 PM - 2:24 PM JST(5:22 AM - 5:24 AM UTC)

2025 International Conference on Solid State Devices and Materials

Session Details

[SO-PS-11]11: Advanced Materials: Synthesis / Crystal Growth / Characterization

[SO-PS-11-01]Solid-Phase Crystallization of Large-Grain Ultra-Thin Si Films on Insulator by Sn-Doping and Growth-Temperature Lowering

[SO-PS-11-02]Passivation of Defects in Sn-Doped Poly-Ge by Post-Annealing

[SO-PS-11-03]Red Emission (620nm) InGaN-Based Nanocolumn LEDs
- Approach for the Improved Current Injection Efficiency –

[SO-PS-11-04]Screen-Printed Cuprous Bromide (CuBr) Thick Films for Ammonia Detection

[SO-PS-11-05]Raman spectroscopy evaluation for solid phase crystallization of amorphous Ge / Mg / SiO2 stacked structure

[SO-PS-11-06]Evaluation of oxygen defect levels of afterglow phosphor Sr₂MgSi₂O₇:E,Dy using first-principles calculations

[SO-PS-11-07]Solid Phase Crystallization of On-Insulator Molecular Beam Deposited Germanium Sulfur Thin Films

[SO-PS-11-08]van der Waals Epitaxy of Ferroelectric α-GeTe(111) Thin Films
for Spin-Based Frugal Electronics and Neuromorphic Devices

[SO-PS-11-09]Phase Evolution and Substrate-Dependent Passivation Behavior of ALD-Ru Films under Oxidizing Conditions

[SO-PS-11-10]C-V characteristics of Mg₂Si graded pn junction fabricated by Ag thermal diffusion on n-type Mg₂Si substrate.

[SO-PS-11-11]Segmentation of Structured Defect Patterns in Wafer Maps Using U-Net Trained on Programmatically Generated Rule-Based Synthetic Data

[SO-PS-11-12]Liquid–metal-based Synthesis of SnO Nanosheets and Application to Transparent Ultraviolet Photodetectors

[SO-PS-11-13]Optimization of Si-Doped β-GA₂O₃ Ceramic Target for High-Performance Thin Film Deposition

[SO-PS-11-14]High-mobility and high-stability In₂O3/Ga₂O₃ heterojunction thin-film transistor

Session Details

[SO-PS-11]11: Advanced Materials: Synthesis / Crystal Growth / Characterization

[SO-PS-11-01]Solid-Phase Crystallization of Large-Grain Ultra-Thin Si Films on Insulator by Sn-Doping and Growth-Temperature Lowering

[SO-PS-11-02]Passivation of Defects in Sn-Doped Poly-Ge by Post-Annealing

[SO-PS-11-03]Red Emission (620nm) InGaN-Based Nanocolumn LEDs- Approach for the Improved Current Injection Efficiency –

[SO-PS-11-04]Screen-Printed Cuprous Bromide (CuBr) Thick Films for Ammonia Detection

[SO-PS-11-05]Raman spectroscopy evaluation for solid phase crystallization of amorphous Ge / Mg / SiO2 stacked structure

[SO-PS-11-06]Evaluation of oxygen defect levels of afterglow phosphor Sr2MgSi2O7:E,Dy using first-principles calculations

[SO-PS-11-07]Solid Phase Crystallization of On-Insulator Molecular Beam Deposited Germanium Sulfur Thin Films

[SO-PS-11-08]van der Waals Epitaxy of Ferroelectric α-GeTe(111) Thin Filmsfor Spin-Based Frugal Electronics and Neuromorphic Devices

[SO-PS-11-09]Phase Evolution and Substrate-Dependent Passivation Behavior of ALD-Ru Films under Oxidizing Conditions

[SO-PS-11-10]C-V characteristics of Mg2Si graded pn junction fabricated by Ag thermal diffusion on n-type Mg2Si substrate.

[SO-PS-11-11]Segmentation of Structured Defect Patterns in Wafer Maps Using U-Net Trained on Programmatically Generated Rule-Based Synthetic Data

[SO-PS-11-12]Liquid–metal-based Synthesis of SnO Nanosheets and Application to Transparent Ultraviolet Photodetectors

[SO-PS-11-13]Optimization of Si-Doped β-GA2O3 Ceramic Target for High-Performance Thin Film Deposition

[SO-PS-11-14]High-mobility and high-stability In2O3/Ga2O3 heterojunction thin-film transistor

[SO-PS-11-03]Red Emission (620nm) InGaN-Based Nanocolumn LEDs
- Approach for the Improved Current Injection Efficiency –

[SO-PS-11-06]Evaluation of oxygen defect levels of afterglow phosphor Sr₂MgSi₂O₇:E,Dy using first-principles calculations

[SO-PS-11-08]van der Waals Epitaxy of Ferroelectric α-GeTe(111) Thin Films
for Spin-Based Frugal Electronics and Neuromorphic Devices

[SO-PS-11-10]C-V characteristics of Mg₂Si graded pn junction fabricated by Ag thermal diffusion on n-type Mg₂Si substrate.

[SO-PS-11-13]Optimization of Si-Doped β-GA₂O₃ Ceramic Target for High-Performance Thin Film Deposition

[SO-PS-11-14]High-mobility and high-stability In₂O3/Ga₂O₃ heterojunction thin-film transistor