Session Details
[J-2]Advanced Devices
Tue. Sep 16, 2025 3:30 PM - 5:00 PM JST
Tue. Sep 16, 2025 6:30 AM - 8:00 AM UTC
Tue. Sep 16, 2025 6:30 AM - 8:00 AM UTC
Room J (411+412, 4th Floor)
Session Chair: Kenji Shiojima (Univ. of Fukui), T. Nogami (IBM Research)
[J-2-01 (Invited)]Pay more attention to development other than power devices: Its importance in commercializing new devices
〇Ken Nakahara1 (1. ROHM Corp. (Japan))
[J-2-02]Hybrid 2T eDARM enabled by Monolithic 3D Hetero-Integrated Circuits with 2D Electronics
〇I-Min Liu1, I-Ling Li2, Han-Hsiang Pai2, Chao-Hui Yeh1,2,3, Chuan-You Lin3, Zih-Yi Wen4 (1. Inst. of Electronics Eng., National Tsing Hua Univ. of Taiwan (Taiwan), 2. College of Semiconductor Res. , National Tsing Hua Univ. of Taiwan (Taiwan), 3. Department of Electrical Eng. , National Tsing Hua Univ. of Taiwan (Taiwan), 4. Department of Physics, National Tsing Hua Uni. of Taiwan (Taiwan))
[J-2-03]Conjugated Radical Based Low Power Memristors for Artificial Synapses
〇Kai Peng1, Chengjia Shi1, Siying Liu1, Yu Yan1, Li Zhang1, Xiaoguang Hu1, Xuying Liu1 (1. Zhengzho University (China))
[J-2-04]Device Fabrication and Equivalent Circuit Optimization of Low-Insertion-Loss Lithium Tantalate Acoustic Filter
〇Taofang Yu1, Chen Xia1, Renrong Liang1, Jun Xu1 (1. Tsinghua University (China))
[J-2-05]A Study of Electron Beam Focusing and Depth Profiling by DUV-Induced Surface Charging of Floating Metal Electrode Arrays
〇HOTING CHAO1, SHANGCHEN TSAI1, WEI CHANG2, BURNJENG LIN1, JIAWREN SHIH1, CHRONGJUNG LIN2, YACHIN KING2 (1. Coll. of Semiconductor Research, National Tsing Hua Univ. (Taiwan), 2. Inst. of Electronics Engineering, National Tsing Hua Univ. (Taiwan))