2025 International Conference on Solid State Devices and Materials
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Session Details

Oral Presentation03: Heterogeneous and 3D Integration / Interconnect / MEMS

[J-4]3D Integration/Packaging/Sensors/Novel Materials

Wed. Sep 17, 2025 10:45 AM - 12:00 PM JST
Wed. Sep 17, 2025 1:45 AM - 3:00 AM UTC
Room J (411+412, 4th Floor)
Session Chair: Yoshiyuki Oba (Sony Semiconductor Manufacturing Corp.), Wei Feng  (AIST)
10:45 AM - 11:15 AM JST(1:45 AM - 2:15 AM UTC)

[J-4-01 (Invited)]TBD

〇TBD1 (1. TBD (Japan))
11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[J-4-02]Vapor-phase Intercalation of Metal Chlorides into Multilayer Graphene Grown Directly on SiO2/Si via Catalyst-free Microwave Plasma Chemical Vapor Deposition

〇Rika Matsumoto1, Yoshito Watai2, Takashi Matsumoto2 (1. Tokyo Polytechnic Univ. (Japan), 2. Tokyo Electron Technology Solutions Ltd. (Japan))
11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[J-4-03]Investigation of Electromigration Mechanisms in NiAl

〇Shuhei Yonehara1, Junichi Koike1 (1. Tohoku Univ. (Japan))
11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[J-4-04]Toward Infinite Selectivity: Area-selective Atomic Layer Deposition of Ruthenium Enabled by CFx Plasma Treatment

〇Dahui Jeon1, Chee Won Chung1, In-Hwan Baek1 (1. Inha university (Korea))
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