[A-5] CFET Technology and Self-heating | 2025 International Conference on Solid State Devices and Materials

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Session Details

Oral Presentation01: Advanced CMOS: Material Science / Process Engineering / Device Technology

[A-5]CFET Technology and Self-heating

Thu. Sep 18, 2025 9:00 AM - 10:30 AM JST
Thu. Sep 18, 2025 12:00 AM - 1:30 AM UTC

Room A (301, 3rd Floor)

Session Chair: Kuniyuki Kakushima (Science Tokyo), Satofumi Souma (Kobe Univ.)

9:00 AM - 9:30 AM JST(12:00 AM - 12:30 AM UTC)

[A-5-01 (Invited)]Challenges and Opportunities in CFET-Based SRAM Design

Yu-Cheng Lu¹, Meng-Lin Wu¹, Amit Ranjan Trivedi², 〇Vita Pi-Ho Hu¹ (1. National Taiwan Univ. (Taiwan), 2. Univ. of Illinois at Chicago (United States of America))

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[A-5-02]A Simulation Study of Single Event Upset in Nanosheet-based CFET SRAM

〇Vanness Filbert Cierra¹, Sida Wang¹, Yoshinari Kamakura¹ (1. Osaka Institute of Technology (Japan))

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[A-5-03]Stacked Transistors with Nanosheet-based Flip FET for A10 Node: A DTCO Viewpoint

〇Haoran Lu¹, Jingru Jiang¹, Jiacheng Sun¹, Ming Li¹, Runsheng Wang¹, Heng Wu¹ (1. Peking Univ. (China))

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[A-5-04]Alleviating Self-Heating-Effect in DFF by Introducing Equivalent Circuit in Double-Cell-Height CFET Design

〇Liang-Chi Huang¹, Huei-Lin Shih¹, Xiang-Ting Huang¹, Pen-Yi Chu¹, Bo-Hsun Juan¹, Ko-Cheng Lu¹, Tzu-Hsuan Chang¹ (1. National Taiwan Univ. (Taiwan))

10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[A-5-05]Effect of an Additional Top Silicon Substrate on Mitigating
Self-Heating Effect in Complementary FET (CFET)

〇Seung Kyu Kim^1,2, Johyeon Kim¹, Kee-Won Kwon¹, Jongwook Jeon¹ (1. Sungkyunkwan Univ. (Korea), 2. Samsung Electronics Corp. (Korea))

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