[B-7] Flash Memory and Emerging Memory Devices | 2026 International Conference on Solid State Devices and Materials

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Session Details

Oral Presentation02: Advanced and Emerging Memories / New Applications

[B-7]Flash Memory and Emerging Memory Devices

Thu. Sep 17, 2026 12:45 PM - 2:00 PM JST
Thu. Sep 17, 2026 3:45 AM - 5:00 AM UTC

Room B(Convention Hall 2, 2rd Floor)

Session Chair:Wein-Town Sun(eMemory Technology Inc.), Siva Ramesh(Micron Technology)

12:45 PM - 1:00 PM JST(3:45 AM - 4:00 AM UTC)

[B-7-01]Asymmetric Dual-Gate Biasing for Optimal Balancing of Read Speed and Program Efficiency in NAND Flash Memory

〇Kwanyong Kim^1,2,3, Devin Verreck^1,2, Kruti Trivedi¹, Laurent Breuil¹, Tathagata Paul², Christophe Lorant¹, Geert Van den bosch¹, Jo De Boeck^1,2, Maarten Rosmeulen^1,2 (1. IMEC (Belgium), 2. KU(Katholieke Univ.) Leuven (Belgium), 3. Samsung Electronics (Korea))

1:00 PM - 1:15 PM JST(4:00 AM - 4:15 AM UTC)

[B-7-02]New insights into enhanced retention characteristics in cryogenic operation combined with defect annihilation annealing in MONOS cells

〇Viktoria Schlykow¹, Yuta Aiba¹, Hitomi Tanaka¹, Hajime Sano¹, Takanori Yamanaka¹, Keiichi Sawa¹, Masumi Saitoh¹, Tomoya Sanuki¹, Reika Ichihara¹ (1. Kioxia Corp. (Japan))

1:15 PM - 1:30 PM JST(4:15 AM - 4:30 AM UTC)

[B-7-03]Monolithic Vertically Stacking 3D 16-nm FinFET 1-Transistor-and-4-Metal-Fuses (1T4F) One-time-programmable Memory (OTP) MACRO

〇Kai Wen Cheng¹, Wei-Da Lin³, Bin-Chi Wang³, Chen-Yan Lin², Hao-wei Chuang², E Ray Hsieh Hsieh¹ (1. National Yang-ming Chiao Tung University (Taiwan), 2. National Central University (Taiwan), 3. National Tsing Hua University (Taiwan))

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[B-7-04]Read-Asymmetry Engineering of 7 nm FinFET-Based OTP Memory for Scalable Compute-in-Memory Arrays

〇BING RONG TANG¹, Cheng Ying Chuang¹, Jiaw Ren Shih¹, Yue Der Chih², Yih Wang², Jonathan Chang², Chrong Jung Lin¹, Ya-Chin King¹ (1. National Tsing Hua University (Taiwan), 2. Taiwan Semiconductor Manufacturing Company (Taiwan))

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[B-7-05]Hot Hole Injection assessment of a 40nm embedded Flash Memory for Neural-Network Application

〇Celine Belabbas¹, Sebastien Perrin¹, Thibault Bergamaschi¹, Vincenzo Della Marca¹, Thibault Kempf², Franck Melul¹, Nicolas Zammit², Jean-Pierre Walder¹, Jean-Michel Portal¹, Jorge Daniel Aguirre-Morales¹, Marc Bocquet¹, Arnaud Regnier², Stephan Niel³, Francesco La Rosa², Pierre Canet¹ (1. Aix-Marseille Univ, Université de Toulon, CNRS, IM2NP, Marseille (France), 2. STMicroelectronics, Rousset (France), 3. STMicroelectronics, Crolles (France))

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