Presentation Information
[5OlXCzC1-09]Investigation of Fully Depleted Silicon On Insulator Devices.
*Samiul Haque Touhid1, Mubashara Maisha1, Maisha Tasnim Adri1, Zannatun Nahar1, Dr. Towhid Adnan Chowdhury1 (1. Ahsanullah University of Science and Technology (Bangladesh))
Keywords:
FD SOI MOSFET,Kink Effect Suppression,TCAD simulation,Gate Oxide Thickness,Buried Oxide Thickness,Channel Doping Concentration
Password required to view
Comment
To browse or post comments, you must log in.Log in
