[19p-A310-1~13] 4.2 Photonics Devices, Photonic Integrated Circuit and Silicon Photonics

16:15 〜 16:30英語発表

[19p-A310-11] AlN Stressor Layer for Ge-on-Si Photonic Devices

〇Jose Alberto Piedra¹, Shohei Kaneko¹, Takaaki Fukushima¹, Keisuke Yamane¹, Junichi Fujikata², Yasuhiko Ishikawa¹ (1.Toyohashi Univ. Tech., 2.Tokushima Univ.)

キーワード：

Germanium、Aluminum Nitride、Stressor

In this work AlN deposited by reactive sputtering is studied as an external stressor for controlling the operating wavelength of near-infrared photonic devices with a Ge epitaxial layer on Si. Ge strips structures with a bottom width ranged from 0.9 to 100 µm were prepared by selective-area chemical vapor deposition on Si, followed by a deposition of an AlN overlayer by reactive sputtering. The Raman spectrum indicates a tensile strain generated by depositing the AlN film on the Ge strip. Such a tensile strain induces a red shift in the direct bandgap energy of Ge confirmed by the photoluminescence spectroscopy.