講演情報
[19p-P04-44]Effective Self-Assembled Monolayer as Hole Selective Layer of Inverted All-inorganic Perovskite Solar Cells to Boost Efficiency of 8.95%
〇(D)Siliang Cao1,2, Yulu He1,2, Muhammad Monirul Islam2, Takeaki Sakurai2, Ashraful Islam1 (1.NIMs, 2.Univ. of Tsukuba)
キーワード：
All-inorganic perovskite solar cells、Hole selective material、Monolayer
Since first perovskite solar cell (PSC) reported in 2009, PSC shows rapid development in power conversion efficiency (PCE) from 3.8% to 26% due to its superior opto-electronic properties. However, the instability from moisture and heat arising from the organic constituents such as methylammonium and formamidinium seriously impedes its commercialization. As the prospective alternatives based on inorganic cation, CsPbIBr2 demonstrates suitable bandgap (~ 2.08 eV) and reinforced thermal stability (> 460℃), becoming a preferable candidate in all-inorganic PSC community.
In this work, a series of self-assembled monolayers (SAMs) are first employed in all-inorganic CsPbIBr2 PSCs. Constructing the structure of ITO/SAM/CsPbIBr2/C60/BCP/Ag, the improved J-V performance has been realized attributed to the simple and low-cost SAM layer. As the substitution for NiOx, smooth and uniform surface of SAMs facilitates a preferable interface contact with the upper perovskite film, resulting in higher Jsc. The enhanced Voc is mainly attributed to the well-matched energy level alignment between SAMs and CsPbIBr2. Afterwards, we investigate the effect of increasing concentration for SAM solution by increasing the content from 0.1 mmol/ml to 0.2 mmol/ml. Encouragingly, 0.15 mmol/ml SAM obtains champion device with improved Jsc of 10.42 mA/cm2 and FF of 77.79%, leading to PCE of 8.95%. In addition, the proper concentration of 0.15 mmol/ml significantly reduces device hysteresis.
In conclusion, we have successfully employed SAMs as hole selective layer in inverted all-inorganic CsPbIBr2 PSCs and obtained high-performance device via concentration control. This study provides a simple and effective method for inverted all-inorganic CsPbIBr2 PSCs.
In this work, a series of self-assembled monolayers (SAMs) are first employed in all-inorganic CsPbIBr2 PSCs. Constructing the structure of ITO/SAM/CsPbIBr2/C60/BCP/Ag, the improved J-V performance has been realized attributed to the simple and low-cost SAM layer. As the substitution for NiOx, smooth and uniform surface of SAMs facilitates a preferable interface contact with the upper perovskite film, resulting in higher Jsc. The enhanced Voc is mainly attributed to the well-matched energy level alignment between SAMs and CsPbIBr2. Afterwards, we investigate the effect of increasing concentration for SAM solution by increasing the content from 0.1 mmol/ml to 0.2 mmol/ml. Encouragingly, 0.15 mmol/ml SAM obtains champion device with improved Jsc of 10.42 mA/cm2 and FF of 77.79%, leading to PCE of 8.95%. In addition, the proper concentration of 0.15 mmol/ml significantly reduces device hysteresis.
In conclusion, we have successfully employed SAMs as hole selective layer in inverted all-inorganic CsPbIBr2 PSCs and obtained high-performance device via concentration control. This study provides a simple and effective method for inverted all-inorganic CsPbIBr2 PSCs.