[20p-A602-1~16] CS.7 4.5 Nanocarbon and 2D Materials、17 ナノカーボン・二次元材料のコードシェアセッション

17:00 〜 17:15奨励賞エントリー英語発表

[20p-A602-12] Plasmonic rectification effect in an asymmetric periodically gated graphene field effect transistor for THz detection

〇Chao Tang^1,2, Hironobu Seki^1,3, Koichi Tamura^1,3, Shinnosuke Uchigasaki^1,3, Hirokazu Fukidome¹, Yuma Takida⁴, Hiroaki Minamide⁴, Akira Satou¹, Taiichi Otsuji¹ (1.RIEC, Tohoku Univ., 2.FRIS, Tohoku Univ., 3.School of Eng. Tohoku Univ., 4.RAP, RIKEN)

キーワード：

Plasmonic rectification、Graphene、THz detection

In this study, we propose a novel approach to THz wave detection using an asymmetrically gated graphene field-effect transistor (GFET). By utilizing two sets of gates arranged in an asymmetric manner, we achieve periodic modulation of the carrier density along the channel. Previous research has explored various mechanisms for THz detection, including the photo-thermalelectric (PTE) effect, photovoltaic (PV) effect, bolometric (BM) effect, and plasma rectification (PR). While PR has been observed in a direct-current photoresponse, but yet to be in fast temporal response. Our study aims to provide direct evidence of PR-based fast-speed detection in a GFET. We apply a specific bias to the asymmetrically gated GFET, resulting in a periodically arranged carrier density and observing clear evidence of PR in the graphene channel.