講演情報
[20p-A602-14]Remote charge modulation effect of monolayer MoS2 using periodically polarization-inverted structure and hBN spacer layer
Rong Kaippeng1, Ryosuke Noro2, Hayato Nishigaki2, MIngda Ding2, Yao Yao2, Taiki Inoue2, Ryuji Katayama2, Yoshihiro Kobayashi2, Kazunari Matsuda3, 〇Shinichiro Mouri1 (1.Ritsumeikan Univ., 2.Osaka Univ., 3.Kyoto Univ.)
キーワード：
2D materials、MoS2、Transition metal dichalcogenide
This study presents a novel method for remote spatial carrier modulation in two-dimensional material Molybdenum disulfide (MoS2) using a periodically polarization-inverted ferroelectric structure and h-BN layers as spacers. Sequentially transferred monolayer MoS2 and few-layer hBN onto a MgO:LiNbO3 ferroelectric substrate resulted in charge distribution within the MoS2 that varied spatially according to substrate polarization. Photoluminescence mapping revealed a higher electron density in up-domain regions compared to down-domain ones. The carrier density in the up-domain was estimated to be about 4 times larger. This spatial modulation effect was observed despite the presence of few-layer h-BN, suggesting possible mechanisms like tunneling charge transfer through impurity states in h-BN or direct carrier redistribution by strong surface electric fields. Details will be discussed in the presentation.