講演情報
[21p-A311-5]Non-linear fading-memory property arising from a planar device of single-walled carbon nanotube/tetratolylporphyrin random network
〇(P)Deep Banerjee1,2, Yuki Usami1,2, Hiroyuki Furuta3,4, Hirofumi Tanaka1,2 (1.KYUTECH, 2.Neumorph Center, 3.Ritsumeikan Univ, 4.Kyushu Univ)
キーワード：
non-linear fading memory、single-walled carbon nanotube、tetra tolyl porphyrin
Nanocomposite-based planar memory devices, with their easy solution-processible fabrication on any flexible substrate, high endurance, and retention time, are currently being studied for their potential to develop large-scale printable next-generation hardware AI devices cost-effectively. Herein, we fabricated such a device with a single-walled carbon nanotube (SWNT)/tetratolyporphyrin (TTP) complex. Owing to the charge transfer dynamics from porphyrin to SWNT, SWNT/TTP was studied for its potential non-linear short-term memory property. It was further exploited to carry out spatio-temporal information processing to possibility use it as an in-materio reservoir computing devices in the coming research.