講演情報
[22a-A311-2]Bottom Contact 100 nm Channel-Length α-In2Se3 In-Plane Ferroelectric Memory
〇(M2)Shurong Miao1, Ryosuke Nitta1, Seiichiro Izawa1, Yutaka Majima1 (1.Tokyo Tech)
キーワード：
ferroelectric field-effect transistor、in-plane polarization、nano-channel memory
α-In2Se3 with a band gap of 1.43 eV[1] and ferroelectricity at the atomic level is a promising channel material in ferroelectric field-effect transistors (Fe-FETs) owing to the retentive and switchable dipoles driven by an external electric field that can be interpreted as on and off states for nonvolatile memory purpose. Many reported α-In2Se3 Fe-FETs proposed a channel length of greater than or equal to 1 μm based on sandwich structure utilizing out-of-plane (OOP) polarization of α-In2Se3[2-4]. However, the scope of research is limited by the lack of lateral devices that demonstrate in-plane (IP) polarization-controlled electrical characteristics, as well as scaled-down Fe-FETs with nanogap electrodes. With a channel length less than sub-μm, the device can modulate polarization via relatively low voltage and show a limited number of threshold voltage (VT) levels related to the switching of individual domains[5].
Here we demonstrate the IP ferroelectric memory effect of a 100-nm channel-length α-In2Se3 stamped onto nanogap electrodes on SiO2/Si under a lateral electric field. Distinct from previous devices, in our device, α-In2Se3 is fully bottom contacting electrodes for exploiting the IP polarization to the maximal extent. A large memory window of 12 V at drain voltage between ±6.5 V can be explained by controlled IP polarization. The non-volatile memory characteristics including stable retention lasting more than 300 s and endurance for 230 cycles suggest a wide range of memory applications by the lateral memristive effect.
Here we demonstrate the IP ferroelectric memory effect of a 100-nm channel-length α-In2Se3 stamped onto nanogap electrodes on SiO2/Si under a lateral electric field. Distinct from previous devices, in our device, α-In2Se3 is fully bottom contacting electrodes for exploiting the IP polarization to the maximal extent. A large memory window of 12 V at drain voltage between ±6.5 V can be explained by controlled IP polarization. The non-volatile memory characteristics including stable retention lasting more than 300 s and endurance for 230 cycles suggest a wide range of memory applications by the lateral memristive effect.