講演情報
[22a-P01-36]Electric structure of Fe/MgN/MgO/Fe Magnetic Tunnel Junction
〇(D)Yosephine Novita Apriati1, Kenji Nawa1, Kohji Nakamura1 (1.Mie University)
キーワード：
MTJ、Spin polarization、Interface modification
Using Fe(10)/MgO(5)/Fe(10) MTJ structure, the effect of inserting MgN monolayer (ML) at the Fe/MgO or inside MgO layers on the electronic structures are investigated using first principle calculation. From total energy calculations, the system where MgN ML is inserted at the interface is found to be the most stable structure. In this Fe/MgN/MgO/Fe system, the highly-spin-polarized electronic structure (nearly HM) is obtained at the interfacial N in MgN and Fe, where density of states at the Fermi level is dominated by $\Delta$1 bands of N (s, pz) and Fe (s, pz, dz2) which are strongly hybridized. The mechanism of high spin polarization is understood as partially filled majority-spin states at the N site due to one electron less than the O of MgO. This does not happen at pristine structure Fe/MgO/Fe. In the presentation, we will also discuss the effective barrier thickness of the MgN/MgO and interfacial magneto-crystalline anisotropy for the modelled systems.