講演情報
[22p-C601-3]Efficiency Enhancement of MASn0.5Ge0.5I3 Perovskite Solar Cells by Defect Passivation
〇Ajay Kumar Baranwal1, Qing Shen1, Shuzi Hayase1 (1.Electro-Comm. Univ.)
キーワード：
Sn-Ge perovskite、Solar cell、Pb-free
The toxicity of lead (Pb) in perovskite solar cells has encouraged the search for another eco-friendly materials. As a result, tin (Sn) and germanium (Ge) have been considered as potential substitutes for Pb. Solar cells with Sn/Pb alloyed perovskites that partially substitute Pb have shown comparable photoelectric performance. Pure Sn-based perovskite solar cells have achieved an efficiency of approximately 14%, while Ge-based perovskite solar cells have shown poor efficiency. Therefore, a substitution strategy was used to fabricate mixed Sn/Ge halide perovskite solar cells. The selection of methylamine (MA) Sn-Ge as an active layer was motivated by its tolerance factor of 0.984 and octahedral factor of 0.43 for MASn0.5Ge0.5I3. An initial efficiency of 3.14% (with a fill factor of 0.56, open circuit voltage of 0.313V, and short circuit current density of 17.93 mA/cm2) was achieved, which is the best-reported value to date for a MASn0.5Ge0.5I3 photoactive layer fabricated using spin coating methods. Further details on the optoelectronic properties and device performance enhancements achieved through effective defect passivation will be discussed at the conference.