[22p-C601-1~22] 12.5 有機・ハイブリッド太陽電池

14:15 〜 14:30英語発表

[22p-C601-4] Vapor phase deposition of tin halide perovskite CsSnBr₃ thin films with three-temperature method

〇(D)Zihao Liu¹, Hanbo Jung¹, Masato Sotome², Takashi Kondo^1,2 (1.School of Eng., Univ. of Tokyo, 2.RCAST, Univ. of Tokyo)

キーワード：

perovskite、vapor phase deposition、three-temperature growth

Tin halide perovskite CsSnBr₃ has great potential for applications in various photonic devices. Compared with the solution method, CsSnBr₃ thin films prepared by co-evaporation of CsBr and SnBr₂ show better surface morphology. In this study, we have studied the effect of substrate temperature (T_sub) on the vapor phase deposition of CsSnBr₃. We found that three-temperature growth is achieved when the substrate temperature was between the two cell temperatures. In addition, the average grain size increased dramatically to ~780 nm (T_sub=300°C).