講演情報
[22p-C601-5]Effect of CsSnI3 doping on the Performance of BiI3-based Solar Cell
〇(D)Aditya Wahyu Anugrah1, Itaru Raifuku1,2, Hidenori Kawanishi1, Yukiharu Uraoka1 (1.Nara Inst. of Sci. and Tech., 2.Aoyama Gakuin Univ.)
キーワード：
perovskite solar cell、photovoltaic、lead-free
Perovskite solar cells (PSCs) are nominated as one of the best candidates for the alternative renewable energy source. Although the power conversion efficiency of PSCs has remarkably been improved in a short term, its stability and toxicity remain as concerns. Bismuth (Bi)-based materials are promising candidates to replace toxic lead (Pb)-containing compounds. The effective ionic radius of Bi (1.03 Å) is equivalent to that of Pb (1.19 Å) and Bi perovskites have been repeatedly demonstrated to be stable in both dry and humid air. This research aims to study the effect of cesium tin iodide (CsSnI3) doping on the performance of of bismuth (III) iodide (BiI3) based PSCs.
PSCs with a device structure of ITO/SnO2/perovskite/Spiro-OMeTAD/Au were fabricated through conventional spin-coating process. BiI3 showed the band gap of 1.75 eV, which is consistent with the literature values. The band gap decreased to 1.41 eV when CsSnI3 it was doped with a volume ratio of CsSnI3: BiI3 (1:6). Additionally, pure CsSnI3 showed higher band gap of 2.51 eV. Based on X-ray photoelectron spectroscopy (XPS) analysis, it was observed that the Fermi level (EF) considerably shifts toward conduction band minimum (CBM) by CsSnI3 doping. The estimated energy band diagram is schematically illustrated. Our results demonstrate that bandgap, CBM, and VBM of BiI3 films can be modified by CsSnI3 doping. The current density–voltage (J–V) curves of solar cells measured under AM1.5G (100 mWcm-2) illumination is also shown. The CsSnI3:BiI3 solar cell showed a power conversion efficiency of 0.0160%, while pure BiI3 and CsSnI3 based solar cells did not show any photovoltaic properties (the efficiencies were both 0.0 %).
PSCs with a device structure of ITO/SnO2/perovskite/Spiro-OMeTAD/Au were fabricated through conventional spin-coating process. BiI3 showed the band gap of 1.75 eV, which is consistent with the literature values. The band gap decreased to 1.41 eV when CsSnI3 it was doped with a volume ratio of CsSnI3: BiI3 (1:6). Additionally, pure CsSnI3 showed higher band gap of 2.51 eV. Based on X-ray photoelectron spectroscopy (XPS) analysis, it was observed that the Fermi level (EF) considerably shifts toward conduction band minimum (CBM) by CsSnI3 doping. The estimated energy band diagram is schematically illustrated. Our results demonstrate that bandgap, CBM, and VBM of BiI3 films can be modified by CsSnI3 doping. The current density–voltage (J–V) curves of solar cells measured under AM1.5G (100 mWcm-2) illumination is also shown. The CsSnI3:BiI3 solar cell showed a power conversion efficiency of 0.0160%, while pure BiI3 and CsSnI3 based solar cells did not show any photovoltaic properties (the efficiencies were both 0.0 %).