セッション詳細
[23p-1BJ-1~12]10.3 スピンデバイス・磁気メモリ・ストレージ技術
2024年3月23日(土) 13:30 〜 16:45
1BJ (1号館)
金井 駿(東北大)、 安藤 裕一郎(京大)
[23p-1BJ-1]Flexible GMR device with magnetic anisotropy induced by built-in strain
〇Toshiaki Morita1, Tomohiro Koyama1,2,3,4, Daichi Chiba1,2,3,5 (1.SANKEN, Osaka Univ., 2.CSRN, Osaka Univ., 3.OTRI, Osaka Univ., 4.PRESTO, JST, 5.SRIS, Tohoku Univ.)
[23p-1BJ-4]Design for high sensitivity in magnetic vortex type linear TMR sensors
〇(M1)Seiya Takano1, Muftah Al-Mahdawi2, Mikihiko Oogane1,3 (1.Graduate School of Engineering, Tohoku Univ., 2.Libya International Medical Univ., 3.CSIS, Tohoku Univ.)
[23p-1BJ-6]Simulation-based design of anomalous Hall effect read sensors
〇Tomoya Nakatani1, Prabhanjan Kulkarni1, Hirofumi Suto1, Hitoshi Iwasaki1, Yuya Sakuraba1 (1.NIMS)
[23p-1BJ-7]Demonstration of fast probabilistic bit with in-plane stochastic magnetic tunnel junction and feed-forward neural network
〇Haruna Kaneko1,2, Nihal Singh3, Shaila Niazi3, Shuvro Chowdhury3, Kemal Selcuk3, Keito Kobayashi1,2, Shun Kanai1,2,4,5,6,7,8, Hideo Ohno1,6,7,9, Kerem Camsari3, Shunsuke Fukami1,2,6,7,9,10 (1.RIEC, Tohoku Univ., 2.Grad. Sch. Eng., Tohoku Univ., 3.Dept. Elec. and Comp. Eng., UCSB, 4.JST PRESTO, 5.DEFS, Tohoku Univ., 6.CSIS, Tohoku Univ., 7.WPI-AIMR, Tohoku Univ., 8.QST, 9.CIES, Tohoku Univ., 10.InaRIS)
[23p-1BJ-8]Electric-field control of tunnel magnetoresistance ratio in magnetic tunnel junctions with a Co2FeSi/PMN-PT multiferroic heterostructure
〇Takamasa Usami1,2, Kenya Suzuki3,4, Shigemi Mizukami4,5, Kohei Hamya1,2 (1.CSRN, Osaka Univ., 2.OTRI, Osaka Univ., 3.Grad. Sch. Eng, Tohoku Univ., 4.AIMR, Tohoku Univ., 5.CSIS, Tohoku Univ.)
[23p-1BJ-9]Canted Magnetic Field Assisted Spin Orbit Torque Switching in a Perpendicularly Magnetized Nano-magnet
〇Tian Li1, Masahiro Koike1, Toshiya Murakami1, Nobuyuki Umetsu1, Hiroki Tokuhira1, Michael Quinsat1, Masatoshi Yoshikawa1 (1.Institute of Memory Technology R&D, Kioxia Corp.)
[23p-1BJ-10]Amorphous W-Ta-B alloys: spin Hall material for energy-efficient SOT-MRAM with high thermal tolerance
〇Yuki Hibino1, Tatsuya Yamamoto1, Tomohiro Taniguchi1, Kay Yakushiji1, Hitoshi Kubota1, Shinji Yuasa1 (1.AIST)
[23p-1BJ-11]Significant Current-Induced Domain Wall Motion Improvement in Laser-Annealed GdFeCo and GdFe Nanowires
〇(P)Mojtaba Mohammadi1, Satoshi Sumi1, Kenji Tanabe1, Hiroyuki Awano1 (1.Memory Engineering Laboratory, Toyota Technological Institute, Nagoya 468-8511, Japan)
[23p-1BJ-12]内部クロックを有する磁区格納型スキルミオンレーストラックメモリ
〇(M2)狩野 達郎1、清水 大瑚1、大木 彩加1、大島 大輝1、狩野 絵美1、加藤 剛志1、五十嵐 信行1、長尾 全寛1 (1.名古屋大工)