セッション詳細

[23p-1BJ-1~12]10.3 スピンデバイス・磁気メモリ・ストレージ技術

2024年3月23日(土) 13:30 〜 16:45
1BJ (1号館)
金井 駿(東北大)、 安藤 裕一郎(京大)

[23p-1BJ-1]Flexible GMR device with magnetic anisotropy induced by built-in strain

〇Toshiaki Morita1, Tomohiro Koyama1,2,3,4, Daichi Chiba1,2,3,5 (1.SANKEN, Osaka Univ., 2.CSRN, Osaka Univ., 3.OTRI, Osaka Univ., 4.PRESTO, JST, 5.SRIS, Tohoku Univ.)

[23p-1BJ-2]インクジェット印刷によるスピンゼーベック素子作製

〇黒川 雄一郎1、山田 啓介2、湯浅 裕美1 (1.九大シス情、2.岐阜大工)

[23p-1BJ-3]TMRセンサ応用に向けた(110)配向FeAlSi薄膜の作製

〇(M1)網家 大輔1、北條 峻之1、赤松 昇馬1、角田 匡清1、大兼 幹彦1 (1.東北大工)

[23p-1BJ-4]Design for high sensitivity in magnetic vortex type linear TMR sensors

〇(M1)Seiya Takano1, Muftah Al-Mahdawi2, Mikihiko Oogane1,3 (1.Graduate School of Engineering, Tohoku Univ., 2.Libya International Medical Univ., 3.CSIS, Tohoku Univ.)

[23p-1BJ-5]TMR センサにおける 1/f ノイズの理論解析

〇今村 裕志1、荒井 礼子1、松本 利映1、山路 俊樹1 (1.産総研)

[23p-1BJ-6]Simulation-based design of anomalous Hall effect read sensors

〇Tomoya Nakatani1, Prabhanjan Kulkarni1, Hirofumi Suto1, Hitoshi Iwasaki1, Yuya Sakuraba1 (1.NIMS)

[23p-1BJ-7]Demonstration of fast probabilistic bit with in-plane stochastic magnetic tunnel junction and feed-forward neural network

〇Haruna Kaneko1,2, Nihal Singh3, Shaila Niazi3, Shuvro Chowdhury3, Kemal Selcuk3, Keito Kobayashi1,2, Shun Kanai1,2,4,5,6,7,8, Hideo Ohno1,6,7,9, Kerem Camsari3, Shunsuke Fukami1,2,6,7,9,10 (1.RIEC, Tohoku Univ., 2.Grad. Sch. Eng., Tohoku Univ., 3.Dept. Elec. and Comp. Eng., UCSB, 4.JST PRESTO, 5.DEFS, Tohoku Univ., 6.CSIS, Tohoku Univ., 7.WPI-AIMR, Tohoku Univ., 8.QST, 9.CIES, Tohoku Univ., 10.InaRIS)

[23p-1BJ-8]Electric-field control of tunnel magnetoresistance ratio in magnetic tunnel junctions with a Co2FeSi/PMN-PT multiferroic heterostructure

〇Takamasa Usami1,2, Kenya Suzuki3,4, Shigemi Mizukami4,5, Kohei Hamya1,2 (1.CSRN, Osaka Univ., 2.OTRI, Osaka Univ., 3.Grad. Sch. Eng, Tohoku Univ., 4.AIMR, Tohoku Univ., 5.CSIS, Tohoku Univ.)

[23p-1BJ-9]Canted Magnetic Field Assisted Spin Orbit Torque Switching in a Perpendicularly Magnetized Nano-magnet

〇Tian Li1, Masahiro Koike1, Toshiya Murakami1, Nobuyuki Umetsu1, Hiroki Tokuhira1, Michael Quinsat1, Masatoshi Yoshikawa1 (1.Institute of Memory Technology R&D, Kioxia Corp.)

[23p-1BJ-10]Amorphous W-Ta-B alloys: spin Hall material for energy-efficient SOT-MRAM with high thermal tolerance

〇Yuki Hibino1, Tatsuya Yamamoto1, Tomohiro Taniguchi1, Kay Yakushiji1, Hitoshi Kubota1, Shinji Yuasa1 (1.AIST)

[23p-1BJ-11]Significant Current-Induced Domain Wall Motion Improvement in Laser-Annealed GdFeCo and GdFe Nanowires

〇(P)Mojtaba Mohammadi1, Satoshi Sumi1, Kenji Tanabe1, Hiroyuki Awano1 (1.Memory Engineering Laboratory, Toyota Technological Institute, Nagoya 468-8511, Japan)

[23p-1BJ-12]内部クロックを有する磁区格納型スキルミオンレーストラックメモリ

〇(M2)狩野 達郎1、清水 大瑚1、大木 彩加1、大島 大輝1、狩野 絵美1、加藤 剛志1、五十嵐 信行1、長尾 全寛1 (1.名古屋大工)