講演情報
[8p-N303-1][The 58th Young Scientist Presentation Award Speech] Observation of the orbital Hall effect in Silicon
〇Ryoga Matsumoto1, Ryo Ohshima1,2, Yuichiro Ando3, Masashi Shiraishi1,2 (1.Kyoto Univ., 2.CSRN Kyoto Univ., 3.Osaka Metropolitan Univ.)
キーワード：
orbital Hall effect、silicon、spin-torque ferromagnetic resonance
In recent years, the orbital Hall effect (OHE) has emerged as a new mechanism of angular momentum transport and attracted tremendous attention in the field of condensed matter physics and spintronics. The OHE is a phenomenon in which an application of an electric field gives rise to the transverse flow of orbital angular momentum (orbital current). Unlike the spin Hall effect, which typically requires heavy elements with strong spin-orbit coupling, the OHE takes place even in light elements, offering a significant advantage in terms of material flexibility for spin-orbit torque (SOT) devices. Although the OHE is observable in a wide variety of materials with orbital hybridization, the previous study on OHE has mainly focused on light transition metals such as Ti and Zr, where s-dorbital hybridization plays a crucial role in generating orbital currents. In this study, the OHE in Si, which is semiconductor and has s-p orbital hybridization, is investigated by using spin-torque ferromagnetic resonance measurement.