講演情報
[8p-N304-4]Reducing critical current for spin-transfer-torque-induced magnetization reversal in CPP-GMR devices: effect of low damping and enhanced spin scattering asymmetry in Co2FeGa0.5Ge0.5 Heusler alloy
〇(P)Vineet Barwal1, Hirofumi Suto1, Yuya Sakuraba1 (1.National Institute for Materials Science)
キーワード：
Spintronics、Heusler Alloys、CPP-GMR devices
Spin-transfer torque (STT) in magnetoresistive devices has enabled key applications such as STT-magnetoresistive random access memory, spin torque oscillators, and energy-assisted magnetic recording. In device structures, where a free layer (FL) magnetization is manipulated by spin injection from a spin injection layer (SIL), the critical current density required for operation is directly proportional to the damping constant of FL and inversely proportional to the STT efficiency, which depends on the spin polarization of the materials. We investigated the effect of low Gilbert damping (α) and high spin polarization (P) of Co2FeGa0.5Ge0.5 (CFGG) Heusler alloy on the operation current required for STT-induced magnetization reversal in current perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices.