講演情報
[8p-N304-6]Modulation of antiferromagnetic domain structure of epitaxial NiO(001) films by inserting Pt underlayer
〇Takumi Yamazaki1, Keita Ito1, Weida Yin1, Theo Balland1, Likun Chen1, Rie Y. Umetsu1, Takuo Ohkochi2,3, Takeshi Seki1,4,5 (1.IMR, Tohoku Univ., 2.JASRI, 3.Univ. of Hyogo, 4.CSIS, Tohoku Univ., 5.SRIS, Tohoku Univ.)
キーワード：
Antiferromagnet、Epitaxial growth、Photoemission electron microscopy
The antiferromagnetic insulator NiO has been extensively studied for its spin current transmission properties. Pt/NiO heterostructures are widely used as a standard platform because the Pt layer not only serves as a spin current injector but also enables epitaxial growth of NiO on top of it. However, the impact of Pt positioning relative to NiO on its magnetic structure has not been fully explored. In this study, we investigate how inserting a Pt underlayer affects the antiferromagnetic domain structure of epitaxial NiO(001) films. Structural analysis confirmed epitaxial growth both with and without the Pt layer, where the former is strained to the substrate and the latter is relaxed. X-ray magnetic linear dichroism-photoemission electron microscopy revealed distinct μm-scale antiferromagnetic domains in NiO without Pt, while domain contrast vanished in NiO with Pt, likely due to reduced domain size. These results indicate that the presence of Pt modifies the domain structure, potentially affecting spin current transmission.