[9E2] X（回折・散乱）

10:45 〜 11:00

[9E2-03] Crystal truncation rod (CTR) technique to analyze crystal distortion at the interface of a TEOS (SiO2)/Si (0.5-inch) wafer produced via a minimal-Fab system

*Halubai Sekhar¹、Bin Liu¹、Ding Zixiang¹、Takurou　 Kouno²、Yasuo Terasawar³、Fumito Imura³、Takeshi Hashishin¹、Eisuke Magome⁴、Ichiro Hirosawa⁴、Masaichiro Mizumaki¹、Ichiro Akai¹ (1. Kumamoto University、2. NIDEK Co., Ltd、3. Hundred Semiconductors Inc.,、4. SAGA-LS)

キーワード：

Crystal truncation rod、Si wafer