Presentation Information

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[3B06]Organotin based polarity change resist used for EUV lithography; Radiation chamistry and the Effect of counter anions

*Kohei Hashimoto¹, Yusa Muroya¹, Takahiro Kozawa¹, Kohei Machida², Satoshi Enomoto², Bilal Naqvi³, Danilo De Simone³ (1. SANKEN, 2. Toyo Gosei Co., 3. imec)

Keywords:

Extreme ultraviolet (EUV) lithography,Radiation chemistry,Micro processing,Organotin,Counter anion

Extreme Ultraviolet (EUV) has been utilized as a radiation source in the semiconductor industry. Then the pitch size is about to reach single-nano order. In this energy region, the effects of photon fluctuations can't be ignored and the resists based on new design guidelines will be requred. We are developing the organotin resists with high EUV absorption coefficiency. In this study, We peformed pulseradiolysis and γ-radiolysis to clarify the radiation chemisty of these reists. Additionaly, the effect of counter anion is also discussed here.

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