Session Details
[Mo-P]Bulk Growth and Wafer Processing
Mon. Sep 28, 2026 1:00 PM - 3:00 PM JST
Mon. Sep 28, 2026 4:00 AM - 6:00 AM UTC
Mon. Sep 28, 2026 4:00 AM - 6:00 AM UTC
Poster-A(1st Floor)
[Mo-P-01]Ultra-High Resistivity 4H-SiC Bulk Crystal Grown by HTCVD with Extremely Low Impurity Incorporation
Zhenzhou Yuan1, *Yuchen Shi2, Xu Pang2, Xinyu Liu2, Qiangqiang Wang1, Shengping He1 (1. Chongqing University (China), 2. Hypersics Corp. Ltd. (China))
[Mo-P-02]A New Understanding of Sublimation Growth in SiC and a Proposed Furnace Structure Based on Si-C Phase Relations
*Takehisa Minowa1, Taichi Abe2 (1. Minowa Material Inspiring (Japan), 2. National Inst. for Materials Sci. (NIMS) (Japan))
[Mo-P-03]Effect of off-axis seed orientation on surface morphology during physical vapor transport growth of 4H-SiC crystals
*Shunta Sueda1, Noboru Ohtani1 (1. Kwansei Gakuin University (Japan))
Cancelled
[Mo-P-04]Evaluation of Nitrogen Incorporation in Polycrystalline and Polytype SiC wafers by Micro-Raman Spectroscopy
Minoru Oikawa1, Koutaro Tetsu1, Kousuke Shimano1, Shunya Sakane1, *Haruhiko Udono1 (1. Ibaraki University (Japan))
[Mo-P-05]Rapid Assessment of Threading Screw Dislocation Suppression During 4H-SiC Growth Initiation Using Few-Millimeter Boules
John M. Woods1, Jiuan Wei1, Ever Velasco1, James Fischer1, *Xueping Xu1, Rajan Rengarajan1 (1. Coherent Corp. (USA))
[Mo-P-06]Distinctive photoluminescence properties of the as-grown surface of physical vapor transport-grown 4H-SiC crystals
*Daichi Iijima1, Shugo Kawakami1, Noboru Ohtani1 (1. Kwansei Gakuin University (Japan))
[Mo-P-07]Dislocation-Induced local property modifications in 4H-SiC crystals grown by physical vapor transport
*Mitsuki Saragai1, Daito Kamikawa1, Noboru Ohtani1 (1. Kwansei Gakuin University (Japan))
[Mo-P-08]Effect of stress on warpage of 4H-SiC substrate
*Hiromasa Suo1, Masato Ito1, Tamotsu Yamashita1, Rimpei Kindaichi1 (1. Resonac Corp. (Japan))
[Mo-P-09]Effect of dual-zone heat treatment on residual stress and defect conversion in bare 4H-SiC wafers
*Chan-Ho Park1, Sang-Jin Bae1, Ho-Gyun Yun1, Mi-Seon Park1, Kwang-Hee Jung1, Jong-Gon Kim1, Kap-Ryeol Ku2, Yun-Ji Shin3, Seong-Min Jeong3, Won-Jae Lee1 (1. Dong-Eui University (Korea), 2. Ein Crystal (Korea), 3. Korea Institute of Ceramic Engineering and Technology (KICET) (Korea))
[Mo-P-10]Numerical Modeling of Residual Stress-Induced Wafer Warpage in 4H-SiC Substrates
*Magdalena Lang1, Paul Wimmer1, Marc Hainke1, Christian Kranert1, Jochen Friedrich1 (1. Fraunhofer Inst. for Integrated Systems and Device Technology IISB (Germany))
[Mo-P-11]Influence of Residual Stress on Dislocation Behavior in 4H-SiC during High-Temperature Annealing
*Paul Wimmer1, Philip Keller2, Christian Kranert1 (1. Fraunhofer IISB (Germany), 2. PVA Technology Hub GmbH (Germany))
[Mo-P-12]Investigation of Graphite Etching by SiC Vapors in the PVT Process
*Yann Gallou1,2, Fernanda Leite de Azevedo2, Abdelmagid El Bakali2, Alexandre Potier1, Andy Covac3, Megan Kephart3, Didier Chaussende2 (1. Mersen France (France), 2. Univ. Grenoble Alpes, CNRS, Grenoble INP, SIMaP (France), 3. Mersen US (USA))
[Mo-P-94]Refurbishment of TaC-Coated Wafer Carriers by Parasitic Deposit Removal and Restorative Recoating
Jeff Lennartz1, *Wei Fan1, Yani Sun1, Jon Leist1, Bowen Dong1 (1. Momentive Technologies (USA))