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Session Details

Invited & OralPlasma Science & Technologies

Plasma Science & Technologies 3

Tue. Mar 4, 2025 5:30 PM - 7:00 PM JST
Tue. Mar 4, 2025 8:30 AM - 10:00 AM UTC
Room A(Active Plaza)
Chair:Vladislav Gamaleev(Air Liquide Laboratories)
Plasma etching 2
5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)

[04pA09O]Low Temperature of Atomic Layer Etching of Si3N4 with CHF3/O2 Plasma and Ar Ion Bombardment

*Taeseok Jung1, Daeun Hong2, Hyeongwu Lee3, Minsung Jeon1, Heeyeop Chae1,2,3 (1. Department of Semiconductor Convergence Engineering, Sungkyunkwan University (SKKU) (Korea), 2. School of Chemical Engineering, Sungkyunkwan University (SKKU) (Korea), 3. SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU) (Korea))
5:45 PM - 6:00 PM JST(8:45 AM - 9:00 AM UTC)

[04pA10O]Plasma Simulation of HF/CF4 Plasma Generated in Dual-Frequency Chmber for High Aspect Ratio Dielectric Etching for 3D NAND

*Shigeyuki Takagi1, Fumihiko Matsunaga2, Shih-Nan Hsiao3, Yusuke Imai3, Makoto Sekine3 (1. Tokyo University of Technology (Japan), 2. PEGSUS Softwarw Inc., (Japan), 3. Nagoya university (Japan))
6:00 PM - 6:15 PM JST(9:00 AM - 9:15 AM UTC)

[04pA11O]Studies of Materials and Components for Advanced Nanolithography Using High Brightness 13.5 nm Radiation and Induced Plasma at Ebl2 Research Facility

*Andrey Ushakov1, Herman Bekman1, Lucas Poirier1, Kristell Barthelemy1, Jacqueline van Veldhoven1, Arnold Storm1, Michel van Putten1, Corné Rijnsent1, Youyou Westland1, Peter van der Walle1, Jetske Stortelder1, Aneta Stodólna1, Han Velthuis1, Kleopatra Papamichou1, Véronique de Rooij-Lohmann1, Dirk van Baarle1, Henk Lensen1 (1. TNO (Netherlands))
6:15 PM - 6:30 PM JST(9:15 AM - 9:30 AM UTC)

[04pA12O]Damage Evaluation for Electron-Beam-Assisted Modification of GaN Surface

*Takayoshi Tsutsumi1, Yusuke Izumi1, Makoto Sekine1, Masaru Hori1, Kenji Ishikawa1 (1. Nagoya Univ. (Japan))
6:30 PM - 6:45 PM JST(9:30 AM - 9:45 AM UTC)

[04pA13O]Surface Reactions by Deep Ultraviolet Laser Irradiation for GaN Etching

*Ryoto Takahashi1, Takayoshi Tsutsumi1, Kenichi Inoue1, Ryusei Sakai1, Makoto Sekine1, Masaru Hori1, Kenji Ishikawa1 (1. Nagoya University (Japan))
6:45 PM - 7:00 PM JST(9:45 AM - 10:00 AM UTC)

[04pA14O]Effect of Sticking Probability on Radical Transports in High-Aspect-Ratio Holes

*Takumi Kurushima1, Takayoshi Tsutsumi2, Makoto Sekine2, Masaru Hori2, Kenji Ishikawa2 (1. Nagoya University (Japan), 2. Center for Low temperature Plasma Sciences (Japan))
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