Presentation Information
[PS-01]Depth profile analysis of charge trapping and chemical bonding states in Ni/SiO2/AlN/GaN structures by voltage-applied AR-HAXPES
*Shunsuke Yamaguchi1, Yoshiharu Kirihara1, Yuichiro Mitani1, Mariko Shimizu2, Yukio Nakabayashi2, Yosuke Kajiwara2, Hiroshi Nohira1 (1. Tokyo City University (Japan), 2. Toshiba Corporation, Corporate Laboratory (Japan))
Keywords:
SiO2/AlN/Gallium nitride,Angle-resolved Hard X-ray photoelectron spectroscopy,Depth profile
Comment
To browse or post comments, you must log in.Log in