Session Details
[PS]Poster Session
Thu. Nov 6, 2025 5:00 PM - 6:30 PM JST
Thu. Nov 6, 2025 8:00 AM - 9:30 AM UTC
Thu. Nov 6, 2025 8:00 AM - 9:30 AM UTC
Exhibition Hall (BF1)
[PS-01]Depth profile analysis of charge trapping and chemical bonding states in Ni/SiO2/AlN/GaN structures by voltage-applied AR-HAXPES
*Shunsuke Yamaguchi1, Yoshiharu Kirihara1, Yuichiro Mitani1, Mariko Shimizu2, Yukio Nakabayashi2, Yosuke Kajiwara2, Hiroshi Nohira1 (1. Tokyo City University (Japan), 2. Toshiba Corporation, Corporate Laboratory (Japan))
[PS-02]Anomalous Vg-Id Characteristics of GaN Power Device due to Ga penetration into AlN Interfacial Layers
*Yusuke Katsuro1, Yoshiharu Kirihara1, Shunsuke Yamaguchi1, Makito Nishi1, Mariko Shimizu2, Yukio Nakabayashi2, Yousuke Kajiwara2, Hiroshi Nohira1, Yuichiro Mitani1 (1. Tokyo City University (Japan), 2. Toshiba Corporation, Corporate Laboratory (Japan))
[PS-03]Effect of Forming Gas Annealing for 3C-SiC n-MOSFET
Rima Nishizaki2, Dong Wang2, *Keisuke Yamamoto2,1 (1. Kumamoto University (Japan), 2. Kyushu University (Japan))
[PS-04]IGZO Transistors with 700 °C Thermal Budget for Advanced DRAM Applications
*Nannan You1,2, Tianhao Liao1,2, Jiayi Wang1,2, Yang Xu1,2, Shengkai Wang1,2 (1. Institute of Microelectronics of Chinese Academy of Sciences (China), 2. Chinese Academy of Sciences (China))
[PS-05]Influence of Ar/O2 ratio during IGZO deposition on the electrical characteristics of a-IGZO metal-insulator-metal diodes
*Chih An Chen1, Bai Jun Guo1, Chang Yi Yen1, Yu Hung Chen1 (1. Department of Microelectronics Engineering, National Kaohsiung University of Science and Technology (NKUST) (Taiwan)) (Taiwan))
[PS-06]Effect of annealing temperature on the electrical characteristics of Al/CuO/p-Si MOS capacitors
*Siang-Yi Hong1, Xiao-Xuan Zeng1, Pei-Hsuan Su1, Yu-Hung Chen1 (1. Department of Microelectronics Engineering, National Kaohsiung University of Science and Technology (NKUST) (Taiwan))
[PS-07]Effects of Interface Formation Process on Tunneling Current Components of N-type Ti0.3Zn0.7O1.3/P-type Si Stack Structure
*Kenta Ogawa1,2, Toyohiro Chikyow2, Atsushi Ogura1,3, Takahiro Nagata2,1 (1. Meiji Univ. (Japan), 2. NIMS (Japan), 3. MREL (Japan))
[PS-08]Classical Molecular Dynamics Simulation of Ferroelectric Properties of a-HfO2
*Jumpei Ohba1, Sora Yamamoto1, Yusuke Nishimura1, Takunobu Watanabe1 (1. Waseda University (Japan))
[PS-09]Effects of Al Concentration and Annealing Method on Crystalline and Ferroelectric properties of Al:HfO2 Thin Films
*Tomoya Mifune1, Hideaki Tanimura1,2, Yuma Ueno2, Yusuke Tani2, Yukiya Sano1, Hironori Fujisawa1, Seiji Nakashima1, Ai I Osaka1, Shinichi Kato2, Takumi Mikawa2 (1. Univ. of Hyogo (Japan), 2. SCREEN (Japan))
[PS-10]Consideration on the Coexisting Positive- and Negative-Imprinted Ferroelectric Domains and Their Imprint-Recovery in Non-Doped HfO2 MFM Capacitor
*Yukinori Morita1, Shutaro Asanuma1, Hiroyuki Ota1, Shinji Migita1 (1. AIST (Japan))
[PS-11]Polarization Inversion in Hf-based Oxide Layer with High Si Content in MOS Structure
*Riku Kayagi1, Wataru Yasuda2, Akio Ohta3, Katsunori Makihara2, Yusuke Ichino1, Yoshiyuki Seike1, Tatsuo Mori1, Noriyuki Taoka1 (1. Aichi Institute of Technology (Japan), 2. Nagoya University (Japan), 3. Fukuoka University (Japan))
[PS-12]Effect of Plasma Treatment on Performance of AlScN-Based Ferroelectric Tunnel Junctions
*Yuki Yamada1, Kazuki Goshima1, Yoshiharu Kirihara1, Ryouichi Kawai1, Kuniyuki Kakushima2, Hiroshi Nohira1, Yuichiro Mitani1 (1. Tokyo City University (Japan), 2. Institute of Science Tokyo (Japan))
[PS-13]Study on Defect Generation in Ferroelectric AlScN from TDDB Statistical Point of View
*Haruro Inoue1, Yuki Yamada1, Kazuki Goshima1, Yoshiharu Kirihara1, Kuniyuki Kakushima2, Hiroshi Nohira1, Yuichiro Mitani1 (1. Tokyo City University (Japan), 2. Institute of Science Tokyo (Japan))
[PS-14]Estimation of Charge Trap Positions in Silicon Nitride Films Using Voltage-applied Hard X-ray Photoelectron Spectroscopy
*Yoshiharu Kirihara1, Hideyuki Yato1, Yuichiro Mitani1, Hiroshi Nohira1 (1. Tokyo City University (Japan))
[PS-15]Fabrication of non-volatile memory using Al2O3/spin-coated CeOx/SiO2/Si stack
*Hiroaki Tanaka1, Yoshiharu Kirihara1, Sorato Mikawa1, Tomoki Yoshida1, Ryousuke Ishikawa1, Hiroshi Nohira1 (1. Tokyo City University (Japan))
[PS-16]New SOD for Crack-Free Thick Film
*Ikuya Ichie1, Kensuke Aida1, Kousuke Kabasawa1, Ryo Sasaki1, Naoko Nakamoto1 (1. Merck Electronics Ltd. (Japan))
[PS-17]Profile-Based Modeling of AC Stress-Induced Degradation in SiON pMOSFETs
*Kyungmin Yoon1, Donghee Son2, Yeohyeok Yun1 (1. Koreatech (Korea), 2. Samsung Electronics (Korea))
[PS-18]New Insights into MOS Interface Degradation of pMOSFETs and nMOSFETs at Cryogenic Temperature
*Yuta Horiko1, Yutaro Masukawa1, Yuichiro Mitani1 (1. Tokyo City University (Japan))
[PS-19]Nondestructive inspection of SiO2/Si interface defect density by nonlinear optics
*Kuang Yao Lo1, Hua-Hsing Liu1, Ting-Yu Yen1, Chiu-Hsien Wu2, Kung-Ming Hung3 (1. National Cheng Kung University (Taiwan), 2. National Chung Hsing University (Taiwan), 3. National Kaohsiung Univ. of Science and Technology (Taiwan))
[PS-20]High-Performance Ge FinFET CMOS Devices with Low-Temperature Supercritical Fluid Process after Post-Plasma Oxidation and Nitridation Treatments
*Yu-Ren Lin1, Kuei-Shu Chang-Liao2, Kai-Chun Yang2 (1. College of Semiconductor Research, National Tsing Hua University Hsinchu, Taiwan, R.O.C. (Taiwan), 2. Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan, R.O.C. (Taiwan))
[PS-21]Fabrication and Performance Analysis of Sol-Gel NiO/Si 830nm Near-Infrared Photodetectors Deposited by Spin-Coating Process
*Yu Xin Feng1, Yu Hung Chen1, Chien Tso Lin1, Jia Hao Lin2 (1. Department of Microelectronics Engineering, National Kaohsiung University of Science and Technology (NKUST) (Taiwan), 2. Opto-Electronics Technology Section Energy and Agile System Department, Metal Industries Research & Development Centre, Kaohsiung, (Taiwan))
[PS-22]New opportunity of GeSiSn/GeSn heterostructure for HEMT application
*Shota Torimoto1, Mitsuo Sakashita1, Masashi Kurosawa1, Osamu Nakatsuka1,2, Shigehisa Shibayama1 (1. Grad. Sch. of Eng., Nagoya Univ. (Japan), 2. IMaSS, Nagoya Univ. (Japan))