Presentation Information
[PS-02]Anomalous Vg-Id Characteristics of GaN Power Device due to Ga penetration into AlN Interfacial Layers
*Yusuke Katsuro1, Yoshiharu Kirihara1, Shunsuke Yamaguchi1, Makito Nishi1, Mariko Shimizu2, Yukio Nakabayashi2, Yousuke Kajiwara2, Hiroshi Nohira1, Yuichiro Mitani1 (1. Tokyo City University (Japan), 2. Toshiba Corporation, Corporate Laboratory (Japan))
Keywords:
GaN,MOSFET,AlN,Degradation,Reliability
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