Presentation Information
[PS-05]Influence of Ar/O2 ratio during IGZO deposition on the electrical characteristics of a-IGZO metal-insulator-metal diodes
*Chih An Chen1, Bai Jun Guo1, Chang Yi Yen1, Yu Hung Chen1 (1. Department of Microelectronics Engineering, National Kaohsiung University of Science and Technology (NKUST) (Taiwan)) (Taiwan))
Keywords:
a-IGZO,RF sputtering,annealing,metal-insulator-metal diodes,Ar/O2 ratio
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