Presentation Information
[PS-07]Effects of Interface Formation Process on Tunneling Current Components of N-type Ti0.3Zn0.7O1.3/P-type Si Stack Structure
*Kenta Ogawa1,2, Toyohiro Chikyow2, Atsushi Ogura1,3, Takahiro Nagata2,1 (1. Meiji Univ. (Japan), 2. NIMS (Japan), 3. MREL (Japan))
Keywords:
Oxide semiconductor,tunnel FETs,Interface formation process
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