Presentation Information
[PS-11]Polarization Inversion in Hf-based Oxide Layer with High Si Content in MOS Structure
*Riku Kayagi1, Wataru Yasuda2, Akio Ohta3, Katsunori Makihara2, Yusuke Ichino1, Yoshiyuki Seike1, Tatsuo Mori1, Noriyuki Taoka1 (1. Aichi Institute of Technology (Japan), 2. Nagoya University (Japan), 3. Fukuoka University (Japan))
Keywords:
Hafnium,Silicate,MOS
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