Presentation Information
[PS-22]New opportunity of GeSiSn/GeSn heterostructure for HEMT application
*Shota Torimoto1, Mitsuo Sakashita1, Masashi Kurosawa1, Osamu Nakatsuka1,2, Shigehisa Shibayama1 (1. Grad. Sch. of Eng., Nagoya Univ. (Japan), 2. IMaSS, Nagoya Univ. (Japan))
Keywords:
Group-IV Compound,GeSiSn,GeSn,heterostructure,HEMT
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