[S1] Hf-based Ferroelectrics

3:40 PM - 4:00 PM JST(6:40 AM - 7:00 AM UTC)

[S1-02] Impacts of oxidant selection and oxidant exposure time in ALD growth on crystallization of as-deposited HZO thin films

*Haoming Che¹, Takashi Onaya^1,2, Atsushi Tamura¹, Masaki Ishii³, Hiroshi Taka³, Koji Kita¹ (1. Dept. of Adv. Mater. Sci., The Univ. of Tokyo (Japan), 2. NIMS (Japan), 3. Taiyo Nippon Sanso (Japan))

Keywords:

Hf0.5Zr0.5O2 thin films,atomic layer deposition,as-deposited crystallization,H2O2