IWDTF2025
Advanced Search

Session Details

Hf-based FerroelectricsElectron device, process, and characterization

[S1]Hf-based Ferroelectrics

Wed. Nov 5, 2025 3:10 PM - 5:20 PM JST
Wed. Nov 5, 2025 6:10 AM - 8:20 AM UTC
Sendai City War Reconstruction Memorial Hall(Exhibition Hall (BF1))
Chair:Reika Ichihara(KIOXIA), Yoshihumi Hiranaga(Tohoku University)
3:10 PM - 3:40 PM JST(6:10 AM - 6:40 AM UTC)

[S1-01]Interface Engineering for Crystal Phase Control and High Fatigue Resistance in Ferroelectric HfO2-Based Thin Films

*Takashi Onaya1,2 (1. NIMS (Japan), 2. The Univ. of Tokyo (Japan))
Comment()
3:40 PM - 4:00 PM JST(6:40 AM - 7:00 AM UTC)

[S1-02]Impacts of oxidant selection and oxidant exposure time in ALD growth on crystallization of as-deposited HZO thin films

*Haoming Che1, Takashi Onaya1,2, Atsushi Tamura1, Masaki Ishii3, Hiroshi Taka3, Koji Kita1 (1. Dept. of Adv. Mater. Sci., The Univ. of Tokyo (Japan), 2. NIMS (Japan), 3. Taiyo Nippon Sanso (Japan))
Comment()
4:00 PM - 4:20 PM JST(7:00 AM - 7:20 AM UTC)

[S1-03]Growth and Ferroelectric Characterization of Lanthanoid-Doped Epitaxial HfO2 Thin Films

Yutaro Tsuchiya1, Kohei Shimonosono1, Kazuki Okamoto1, Wakiko Yamaoka2, Yasunaga Kagaya2, Yukari Inoue2, *Hiroshi Funakubo1 (1. Institute of Science Tokyo (Japan), 2. TDK Corporation (Japan))
Comment()
4:20 PM - 4:40 PM JST(7:20 AM - 7:40 AM UTC)

[S1-04]Process and Composition Engineering of Hafnium-Zirconium Oxide in MIM Capacitors with Morphotropic Phase Boundary Formation

*Hao-chun Yang1, Kuei-Shu Chang-Liao2, Dun-Bao Ruan1, Cheng-Hsueh Wu1 (1. National Tsing Hua Univ. (Taiwan), 2. Fuzhou Univ. (China))
Comment()
4:40 PM - 5:00 PM JST(7:40 AM - 8:00 AM UTC)

[S1-05]Engineering Al2O3 Doping Layers via Flash Lamp Annealing to Enhance Ferroelectricity in HfO2 Thin Films

*Hideaki Tanimura1,2, Tomoya Mifune1, Yuma Ueno2, Yusuke Tani2, Hironori Fujisawa1, Seiji Nakashima1, Ai Isohashi Osaka1, Shinichi Kato2, Takumi Mikawa2 (1. Univ. of Hyogo (Japan), 2. SCREEN Semiconductor Solutions (Japan))
Comment()
5:00 PM - 5:20 PM JST(8:00 AM - 8:20 AM UTC)

[S1-06]Device Design Trade-off in Silicon Junctionless Floating-Body FeFET

*Qiao Chu1, Shinichi Takagi1, Mitsuru Takenaka1, Kasidit Toprasertpong1 (1. The University of Tokyo (Japan))
Comment()
Back to Category List