Presentation Information
[S1-03]Growth and Ferroelectric Characterization of Lanthanoid-Doped Epitaxial HfO2 Thin Films
Yutaro Tsuchiya1, Kohei Shimonosono1, Kazuki Okamoto1, Wakiko Yamaoka2, Yasunaga Kagaya2, Yukari Inoue2, *Hiroshi Funakubo1 (1. Institute of Science Tokyo (Japan), 2. TDK Corporation (Japan))
Keywords:
HfO2,Ferroelectric material,PLD
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