Presentation Information

[S1-05]Engineering Al2O3 Doping Layers via Flash Lamp Annealing to Enhance Ferroelectricity in HfO2 Thin Films

*Hideaki Tanimura1,2, Tomoya Mifune1, Yuma Ueno2, Yusuke Tani2, Hironori Fujisawa1, Seiji Nakashima1, Ai Isohashi Osaka1, Shinichi Kato2, Takumi Mikawa2 (1. Univ. of Hyogo (Japan), 2. SCREEN Semiconductor Solutions (Japan))

Keywords:

Ferroelctricity,HfO2,Doping,Flash lamp annealing,Millisecond annealing


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