[S2] Nitride-based Ferroelectrics

11:15 AM - 11:35 AM JST(2:15 AM - 2:35 AM UTC)

[S2-03] Enhancement of Imprinting Effect in Ferroelectric AlScN Films for Non-Destructive Capacitive Readout Operation Using Metal-Capping Oxidation (MCO) Process

*Shun Komai¹, Si-Meng Chen¹, Takuya Hoshii¹, Kazuo Tsutsui², Hitoshi Wakabayashi², Kuniyuki Kakushima¹ (1. School of Engineering, Institute of Science Tokyo (Japan), 2. Institute of Integrated Research, Institute of Science Tokyo (Japan))

Keywords:

Capacitive readout,Memory window,Imprint effect,Nitride ferroelectrics