[S2] Nitride-based Ferroelectrics | IWDTF2025

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Nitride-based FerroelectricsElectron device, process, and characterization

[S2]Nitride-based Ferroelectrics

Thu. Nov 6, 2025 10:35 AM - 11:35 AM JST
Thu. Nov 6, 2025 1:35 AM - 2:35 AM UTC

5F-Meeting Room

Chair: Jun Okuno(Sony Semiconductor Solutions), Kasidit Toprasertpong(The University of Tokyo)

10:35 AM - 10:55 AM JST(1:35 AM - 1:55 AM UTC)

[S2-01]Observation of ferroelectric switching of AlBN films formed by pulse CVD method

*Yuukou Katou¹, Takuya Hoshii¹, Hitoshi Wakabayashi¹, Kuniyuki Kakushima¹ (1. Institute of Science Tokyo (Japan))

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10:55 AM - 11:15 AM JST(1:55 AM - 2:15 AM UTC)

[S2-02]Area Dependence of Ferroelectric Switching in AlScN Thin Films

*Hirofumi Nishida¹, Si-Meng Chen¹, Takuya Hoshii¹, Kazuo Tsutsui¹, Hitoshi Wakabayashi¹, Kuniyuki Kakushima¹ (1. Institute of Science Tokyo (Japan))

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11:15 AM - 11:35 AM JST(2:15 AM - 2:35 AM UTC)

[S2-03]Enhancement of Imprinting Effect in Ferroelectric AlScN Films for Non-Destructive Capacitive Readout Operation Using Metal-Capping Oxidation (MCO) Process

*Shun Komai¹, Si-Meng Chen¹, Takuya Hoshii¹, Kazuo Tsutsui², Hitoshi Wakabayashi², Kuniyuki Kakushima¹ (1. School of Engineering, Institute of Science Tokyo (Japan), 2. Institute of Integrated Research, Institute of Science Tokyo (Japan))

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